High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
High-Density GaAs/AlAs Quantum Wires Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
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通过分子束外延在 (775)B 取向 GaAs 衬底上生长高密度 GaAs/AlAs 量子线
DOI：
10.1143/jjap.35.l606
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发表时间：
1996
影响因子：
1.5
通讯作者：
S. Hiyamizu
中科院分区：
文献类型：
--
作者：
M. Higashiwaki;Masanori Yamamoto;T. Higuchi;S. Shimomura;A. Adachi;Y. Okamoto;N. Sano;S. Hiyamizu
GaAs/AlAs量子线（QWR）被发现是由规则波纹的AlAs/GaAs界面和平坦的GaAs/AlAs界面在（775）B GaAs衬底上通过分子束外延生长的、阱宽为3.3 nm的AlAs/GaAs/AlAs量子阱中自然形成的。 AlAs/GaAs界面波纹的横向周期和纵向振幅分别为12 nm和1.2 nm。 QWR 以 8×105 QWR/cm 的极高密度并排形成。横截面约为 12×3 nm2 的 QWR 的 λ=715 nm 处的光致发光峰显示偏振度为 (I∥ - I⊥) / (I∥ + I⊥) = 0.11，并且在 4.2 K 时半峰全宽非常小，为 15 meV。
GaAs/AlAs quantum wires (QWRs) were found to be naturally formed by a regularly corrugated AlAs/GaAs interface and a flat GaAs/AlAs interface in an AlAs/GaAs/AlAs quantum well with a well width of 3.3 nm grown on a (775)B GaAs substrate by molecular beam epitaxy. The lateral period and vertical amplitude of the AlAs/GaAs interface corrugation were 12 nm and 1.2 nm, respectively. The QWRs were formed side by side with an extremely high density of 8×105 QWRs/cm. A photoluminescence peak at λ=715 nm from the QWRs with a cross section of about 12×3 nm2 showed a polarization degree of (I∥ - I⊥) / (I∥ + I⊥) = 0.11 and a very small full width at half maximum of 15 meV at 4.2 K.