Fermi-Level-Controlled Semiconducting-Separated Carbon Nanotube Films for Flexible Terahertz Imagers
Fermi-Level-Controlled Semiconducting-Separated Carbon Nanotube Films for Flexible Terahertz Imagers
复制标题
DOI：
10.1021/acsanm.8b00421
复制
发表时间：
2018-06-01
影响因子：
5.9
通讯作者：
Kawano, Yukio
中科院分区：
文献类型：
--
作者：
Suzuki, Daichi;Ochiai, Yuki;Kawano, Yukio
碳纳米管相关的材料和结构被高度期望作为未来柔性电子和光子学的潜在构建块。尽管CNT相关材料的各种有前途的应用，一个障碍是缺乏全局控制和调整微尺度厚度的CNT膜的费米能级的能力，因为这些膜需要一定的厚度来保持它们的独立形状和自由可弯曲的柔性。在这项工作中，我们报告费米能级控制的灵活和可弯曲的太赫兹（THz）成像器与化学可调费米能级调谐方法的碳纳米管薄膜。通过利用离子液体的双电子层技术，我们获得了开/关电阻比（2758）的厚度为30 μ m的分离的碳纳米管膜，并调整费米能级在最佳的栅极电压，以最大限度地提高太赫兹探测器的性能。此外，基于可变浓度掺杂剂溶液的无栅极可调掺杂技术的发展使得能够制造费米能级调谐的p n结CNT THz成像器。所展示的化学可调掺杂能力将有助于实现灵活的THz成像应用，并且当与低成本制造方法（如喷墨涂覆工艺）相结合时，将导致大面积THz光子器件。
Carbon-nanotube-related (CNT-related) materials and structures are highly anticipated as potential building blocks for future flexible electronics and photonics. Despite the various promising applications of CNT-related materials, one obstacle is the lack of ability to globally control and tune the Fermi level of microscale-thick CNT films because these films require a certain thickness to maintain their free-standing shape and freely bendable flexibility. In this work, we report on Fermi-level-controlled flexible and bendable terahertz (THz) imagers with chemically adjustable Fermi-level-tuning methods for CNT films. By utilizing the electronic-double-layer technique with ionic liquids, we obtained an on/off resistance ratio (2758) for a semiconducting-separated CNT film with a thickness of 30 pm and tuned the Fermi level at an optimal gate voltage to maximize the THz detector performance. In addition, the development of a gate-free tunable doping technology based on a variable-concentration dopant solution enabled the fabrication of a Fermi-level-tuned p n junction CNT THz imager. The demonstrated chemically tunable doping capability will facilitate the realization of flexible THz imaging applications and, when combined with a low-cost fabrication method such as an inkjet coating process, will lead to large-area THz photonic devices.