High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates
High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates
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DOI：
10.1063/1.2213175
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发表时间：
2006-06
影响因子：
4
通讯作者：
D. Martin;J. Napierala;M. Ilegems;R. Butté;N. Grandjean
中科院分区：
文献类型：
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作者：
D. Martin;J. Napierala;M. Ilegems;R. Butté;N. Grandjean
采用与金属有机气相外延（MOVPE）相似的两步工艺，在位错密度低于2×108cm−2的c平面蓝宝石衬底上，用氢化物气相外延（HVPE）生长出了高质量的GaN薄层（d=8μm）。非原位表面制备和成核层厚度被证明是实现这些高质量脱毛层的关键因素，因为它们分别允许控制极性和位错密度。此外，我们证明了原位反射率监测应用于HVPE是一种快速优化生长参数的强大技术。因此，通过结构和光学表征，获得了具有最先进MOVPE GaN质量的hpe生长GaN薄层。
The growth by hydride vapor phase epitaxy (HVPE) of high quality thin GaN layers (d=8μm) on c-plane sapphire substrates with dislocation densities lower than 2×108cm−2 is demonstrated using a two-step process similar to that of metal organic vapor phase epitaxy (MOVPE). Ex situ surface preparation and nucleation layer thickness are shown to be critical factors in achieving these high quality epilayers as they allow controlling the polarity and the dislocation density, respectively. Furthermore, we demonstrate that in situ reflectivity monitoring applied to HVPE is a powerful technique for rapidly optimizing the growth parameters. As a result, thin HVPE-grown GaN layers with state of the art MOVPE GaN quality are obtained as demonstrated through structural and optical characterizations.