Photoconductive Effects in Single Crystals of BaZrS3
Photoconductive Effects in Single Crystals of BaZrS3
复制标题
DOI:
10.1021/acsphotonics.3c01563
复制
发表时间:
2023-10
期刊:
影响因子:
7
通讯作者:
Boyang Zhao;Huandong Chen;Ragib Ahsan;Fei Hou;E. Hoglund;Shantanu Singh;M. Shanmugasundaram;Huan Zhao;Andrey Krayev;Han Htoon;P. Hopkins;Jan Seidel;R. Kapadia;J. Ravichandran
中科院分区:
文献类型:
--
作者:
Boyang Zhao;Huandong Chen;Ragib Ahsan;Fei Hou;E. Hoglund;Shantanu Singh;M. Shanmugasundaram;Huan Zhao;Andrey Krayev;Han Htoon;P. Hopkins;Jan Seidel;R. Kapadia;J. Ravichandran
Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.