Photoconductive Effects in Single Crystals of BaZrS3

Photoconductive Effects in Single Crystals of BaZrS3
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DOI:
10.1021/acsphotonics.3c01563
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发表时间:
2023-10
期刊:
影响因子:
7
通讯作者:
Boyang Zhao;Huandong Chen;Ragib Ahsan;Fei Hou;E. Hoglund;Shantanu Singh;M. Shanmugasundaram;Huan Zhao;Andrey Krayev;Han Htoon;P. Hopkins;Jan Seidel;R. Kapadia;J. Ravichandran
Boyang Zhao;Huandong Chen;Ragib Ahsan;Fei Hou;E. Hoglund;Shantanu Singh;M. Shanmugasundaram;Huan Zhao;Andrey Krayev;Han Htoon;P. Hopkins;Jan Seidel;R. Kapadia;J. Ravichandran
中科院分区:
物理与天体物理1区
文献类型:
--
作者:
Boyang Zhao;Huandong Chen;Ragib Ahsan;Fei Hou;E. Hoglund;Shantanu Singh;M. Shanmugasundaram;Huan Zhao;Andrey Krayev;Han Htoon;P. Hopkins;Jan Seidel;R. Kapadia;J. Ravichandran

文献摘要

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硫系钙钛矿,如BaZrS$3$,是一种具有高光伏发电效率的新兴半导体材料。缺陷在光激发载流子的产生和收集效率中的作用还没有得到广泛的实验研究。研究了工艺诱导缺陷对BaZrS$3单晶光导性能的影响。我们实现了BaZrS_3单晶的欧姆接触,观察到了正的表面光电压,这在p型半导体中是典型的。然而,机械抛光去除表面氧化物会导致致密的形变晶界,并导致陷阱主导的光导响应。相比之下,解理晶体中实现的欧姆接触留下的变形缺陷较少,并大大改善了光电性能。缺陷控制的晶体生长和接触制备是在BaZrS$3中实现高的光子到激发电子转换效率的潜在限制因素。
Chalcogenide perovskites, such as BaZrS$_3$, are emerging semiconductors with potential for high photovoltaic power conversion efficiency. The role of defects in the efficiency of the generation and collection of photo-excited carriers has not been experimentally investigated extensively. We study the effect of processing-induced defects on the photoconductive properties of single crystals of BaZrS$_3$. We achieved ohmic contacts to single crystals of BaZrS$_3$ and observed positive surface photovoltage, which is typically observed in p-type semiconductors. However, mechanical polishing of BaZrS$_3$ to remove the surface oxide leads to dense deformation grain boundaries and leads to trap-dominated photoconductive response. In comparison, ohmic contacts achieved in cleaved crystals leave fewer deformation defects and greatly improve optoelectronic properties. Defect-controlled crystal growth and contact fabrication are potentially limiting factors for achieving high photon-to-excited electron conversion efficiency in BaZrS$_3$.