Thermoelectric transport properties of n-doped and p-doped Bi0.91Sb0.09 alloy thin films
Thermoelectric transport properties of n-doped and p-doped Bi0.91Sb0.09 alloy thin films
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DOI：
10.1063/1.369729
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发表时间：
1999-03
影响因子：
3.2
通讯作者：
Sunglae Cho;A. DiVenere;G. Wong;J. Ketterson;J. Meyer
中科院分区：
文献类型：
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作者：
Sunglae Cho;A. DiVenere;G. Wong;J. Ketterson;J. Meyer
为了了解极窄带隙材料的掺杂行为，并优化其特性用于热电模块，我们进行了n-和p-型掺杂实验半导体Bi 0.91Sb 0.09合金薄膜使用第VI（IV）族元素Te（Sn）作为施主（受主）。在5-300 K温度范围内研究了热电功率（TEP）、电阻率和霍尔效应。增加的Sn掺杂导致TEP改变符号（从负到正），并且TEP中的最大值可以用掺杂剂浓度来控制。增加Te掺杂导致TEP降低。最大掺Te电子浓度约为5×1020 cm-3，最大掺Sn空穴浓度约为1×1021 cm-3。高锡和碲掺杂的样品在电阻率、TEP和霍尔测量中表现出简并行为。
In order to understand the doping behavior of extremely narrow band gap materials and to optimize their characteristics for use in a thermoelectric module, we performed n- and p-type doping experiments on semiconducting Bi0.91Sb0.09 alloy thin films using the group VI(IV) element Te(Sn) as donor (acceptor). Thermoelectric power (TEP), electrical resistivity, and Hall effect were studied in the range of temperatures 5–300 K. Increased Sn doping causes the TEP to change sign (from negative to positive) and the maximum in the TEP can be controlled with the dopant concentration. Increased Te doping causes the TEP to decrease. The maximum Te-doped electron concentration was about 5×1020 cm−3 and the highest Sn-doped hole concentration was about 1×1021 cm−3. Highly Sn- and Te-doped samples show degenerate behavior in the electrical resistivity, TEP and Hall measurements.