Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns
Reaction Mechanism of Area-Selective Atomic Layer Deposition for Al2O3 Nanopatterns
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DOI：
10.1021/acsami.7b13365
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发表时间：
2017-11-29
影响因子：
9.5
通讯作者：
Kim, Hyungjun
中科院分区：
文献类型：
--
作者：
Seo, Seunggi;Yeo, Byung Chul;Kim, Hyungjun
从理论和实验两个方面系统研究了自组装单分子膜（SAMs）区域选择原子层沉积（AS-ALD）Al 2 O3薄膜的反应机理。以三甲基铝（TMA）为前驱体，H2O为氧化剂，十八烷基膦酸（ODPA）为自组装膜（SAM），阻止Al 2 O3成膜。然而，Al 2 O3层在几次循环后开始在ODPA自组装膜上形成，尽管有报道称CH 3-终止的自组装膜不能与TMA反应。我们发现，TMA不与SAM发生化学反应，但被物理吸附，作为一个成核网站的Al 2 O3薄膜生长。此外，物理吸附的TMA的量受分压的影响。通过控制它，我们开发了一种具有高选择性的新AS-ALD Al 2 O3工艺，该工艺在370个循环中产生了类似于60 nm厚度的薄膜。利用该工艺成功沉积出Al 2 O3薄膜图形是纳米技术领域的一项突破性技术。
The reaction mechanism of area-selective atomic layer deposition (AS-ALD) of Al2O3 thin films using self-assembled monolayers (SAMs) was systematically investigated by theoretical and experimental studies. Trimethylaluminum (TMA) and H2O were used as the precursor and oxidant, respectively, with octadecylphosphonic acid (ODPA) as an SAM to block Al2O3 film formation. However, Al2O3 layers began to form on the ODPA SAMs after several cycles, despite reports that CH3-tenninated SAMs cannot react with TMA. We showed that TMA does not react chemically with the SAM but is physically adsorbed, acting as a nucleation site for Al2O3 film growth. Moreover, the amount of physisorbed TMA was affected by the partial pressure. By controlling it, we developed a new AS-ALD Al2O3 process with high selectivity, which produces films of similar to 60 nm thickness over 370 cycles. The successful deposition of Al2O3 thin film patterns using this process is a breakthrough technique in the field of nanotechnology.