Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
Chemical Beam Epitaxy of GaAsN Thin Films with Monomethylhydrazine as N Source
复制标题
以一甲肼为氮源的 GaAsN 薄膜的化学束外延
DOI：
10.1143/jjap.46.2844
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发表时间：
2007
影响因子：
1.5
通讯作者：
M. Yamaguchi
中科院分区：
文献类型：
--
作者：
K. Nishimura;H. Lee;Hidetoshi Suzuki;Y. Ohshita;M. Yamaguchi
以甲基肼(MMHy)为氮源，采用化学束外延(CBE)法生长了GaAsN薄膜。在340-480℃的生长温度范围内，研究了决定GaAsN薄膜中N组分的过程。当生长温度较低(340-390℃)时，由于N组分从生长表面的解吸率很低，所以N组分主要由MMHy生成的N组分的供应和生长速度决定。随着生长温度的升高(390~445℃)，N物种的脱附对N组分的影响增强。当生长温度较高(445~480℃)时，N原子从生长层中的偏析程度增加，导致N组分显著降低。因此，N的组成取决于N物种的供解吸平衡和生长速度。
GaAsN thin films were grown by chemical beam epitaxy (CBE) with monomethylhydrazine (MMHy) as a N source. Processes that determine the N composition in the GaAsN thin films were investigated in the growth temperature range from 340 to 480 °C. When growth temperature is low (340–390 °C), N composition is mainly determined by the supply of N species generated from MMHy and growth rate, since the desorption rate of N species from the growing surface is low. The effect of the desorption of N species on N composition is enhanced by increasing growth temperature (390–445 °C). When growth temperature is high (445–480 °C), the degree of N atom segregation from the grown layer increases, resulting in a marked decrease in N composition. Thus, N composition is determined by the balance of supply and desorption of N species, and growth rate.