Characterization of Depleted Monolithic Active Pixel detectors implemented with a high-resistive CMOS technology
Characterization of Depleted Monolithic Active Pixel detectors implemented with a high-resistive CMOS technology
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DOI：
10.1016/j.nima.2015.09.048
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发表时间：
2016-07-11
影响因子：
1.4
通讯作者：
Wermes, N.
中科院分区：
文献类型：
--
作者：
Kishishita, T.;Hemperek, T.;Wermes, N.
我们目前的DMAPS（耗尽单片有源像素传感器），实现了东芝130 nm CMOS工艺的最新发展。与基于外延层的标准MAPS技术的情况不同，该工艺提供了高电阻衬底，其通过在50 - 300 μ m厚的耗尽层中的漂移实现更大的信号和更快的电荷收集。由于该工艺还使得能够使用深n阱来将收集电极与薄有源器件层隔离，因此NMOS和PMOS晶体管可用于每个像素单元中的读出电子器件。为了表征该技术，我们实现了一个简单的三晶体管读出与各种像素间距和输入FET的大小。这种布局变化为我们提供了有关传感器特性的线索，以供未来优化，例如输入检测器电容或漏电流。在最初的测量中，从Fe-55获得的辐射光谱的能量分辨率为770 eV（FWHM）和Sr-90的MVP为4165 e（-）。(C)2015 Elsevier B. V.版权所有。
We present the recent development of DMAPS (Depleted Monolithic Active Pixel Sensor), implemented with a Toshiba 130 nm CMOS process. Unlike in the case of standard MAPS technologies which are based on an epi-layer, this process provides a high-resistive substrate that enables larger signal and faster charge collection by drift in a 50 300 mu m thick depleted layer. Since this process also enables the use of deep n-wells to isolate the collection electrodes from the thin active device layer, NMOS and PMOS transistors are available for the readout electronics in each pixel cell. In order to characterize the technology, we implemented a simple three transistor readout with a variety of pixel pitches and input FET sizes. This layout variety gives us a clue on sensor characteristics for future optimization, such as the input detector capacitance or leakage current. In the initial measurement, the radiation spectra were obtained from Fe-55 with an energy resolution of 770 eV (FWHM) and Sr-90 with the MVP of 4165 e(-). (C) 2015 Elsevier B.V. All rights reserved.