Control of ZnO nanorod array density by Zn supersaturation variation and effects on field emission
Control of ZnO nanorod array density by Zn supersaturation variation and effects on field emission
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DOI：
10.1088/0957-4484/18/21/215704
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发表时间：
2007-05-30
期刊：
影响因子：
3.5
通讯作者：
Henry, Martin O.
中科院分区：
文献类型：
--
作者：
Kumar, R. T. Rajendra;McGlynn, Enda;Henry, Martin O.
我们证明了通过在初始生长阶段改变 Zn 过饱和度来控制 Si 上 ZnO 缓冲层自组织生长的 ZnO 纳米棒密度，从而改变 2D 和 1D 生长模式之间的竞争。较高的初始过饱和度有利于直径 < 200 nm 且基底为微米级的纳米棒，从而形成低密度纳米棒阵列；以较低初始过饱和度生长的纳米棒的整个长度直径< 200 nm，产生更高密度的阵列。场发射和成像研究表明，场增强因子 > 1000，归因于尖锐的刻面边缘，并表明，由于屏蔽效应的降低，较低密度的阵列具有更均匀的发射。
We demonstrate control of ZnO nanorod density for self-organized growth on ZnO buffer layers on Si by varying Zn supersaturation during the initial growth phase, thereby altering the competition between 2D and 1D growth modes. Higher initial supersaturation favours nanorods of diameter < 200 nm with micron-sized bases, resulting in low density nanorod arrays; nanorods grown with lower initial supersaturation have diameters < 200 nm along their entire length, yielding higher density arrays. Field emission and imaging studies reveal field enhancement factors of > 1000, attributed to sharp facet edges, and indicate that lower density arrays have more uniform emission due to a reduction in screening effects.