Current transport through AlInN/GaN multilayers used as n‐type cladding layers in edge emitting laser diodes
Current transport through AlInN/GaN multilayers used as n‐type cladding layers in edge emitting laser diodes
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通过用作边缘发射激光二极管中的 n 型熔覆层的 AlInN/GaN 多层材料进行电流传输
DOI：
10.1002/pssc.201001165
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
B. Corbett
中科院分区：
文献类型：
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作者：
R. Charash;H. Kim;A. Vajpeyi;Mahbuba Akther;P. Maaskant;É. Frayssinet;P. Mierry;J. Duboz;B. Corbett
报道了具有多个周期性 GaN 插入的 n 掺杂、晶格匹配的 AlInN 层的电流传输特性。生长具有三个和七个插入的样品，并通过 AlInN 结构将台面结构蚀刻到不同的深度，以确定每个异质界面的电压贡献。随着 GaN 插入以及各个 AlInN 层的厚度从 80 nm 减少到 55 nm，AlInN 表面的质量得到了改善。模拟表明，大的导带不连续性会导致高导通电压，而高导带电压可以通过高水平掺杂来降低。通过整个结构的电流-电压测量显示了温度激活的二极管特性。当电流仅通过具有 80 nm 厚的 AlInN 层的最上面 GaN 中间层时，测量准线性电流-电压特性，表明电流通过这些层中的缺陷泄漏（© 2011 WILEY-VCH Verlag GmbH & Co. KGaA，Weinheim）
The current transport properties of an n -doped, lattice matched AlInN layer with multiple, periodic GaN insertions are reported. Samples with three and seven insertions were grown and mesa structures were etched through the AlInN structures to different depths to determine the voltage contribution from each heterointerface. The quality of the AlInN surface improved with the GaN insertions and with reducing the thickness of the individual AlInN layers from 80 nm to 55 nm. Simulations suggest that the large conduction band discontinuity can lead to high turn on voltages which can be reduced by high levels of doping. Current-voltage measurements through the full structure show a diode characteristic which is temperature activated. A quasi-linear current-voltage characteristic is measured when the current is driven only through the uppermost GaN interlayer with 80 nm thick AlInN layers, indicating current leakage through defects in these layers (© 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)