Dynamic recrystallization during creep of single‐crystalline halite: An experimental study
Dynamic recrystallization during creep of single‐crystalline halite: An experimental study
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单晶石盐蠕变过程中的动态再结晶：实验研究
DOI：
10.1029/jb084ib10p05557
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发表时间：
1979
影响因子：
--
通讯作者：
J. Poirier
中科院分区：
文献类型：
--
作者：
M. Guillopé;J. Poirier
在250° C至790°C的温度和1.5至120巴的应力下，纯和不纯的岩盐单晶在压缩蠕变过程中动态重结晶。发现再结晶通过两种不同的机制发生：在较低的温度和应力下，新的晶粒来自于没有晶界迁移的亚晶粒的旋转（旋转再结晶），而在较高的温度和应力下，最终的织构来自于旋转亚晶粒的高角度晶界的迁移。迁移再结晶被证明发生临界应力和温度条件下，允许快速晶界迁移。一条曲线在σ、T平面上将两个畴分开，并且对于杂质含量较高的晶体，曲线向更高的温度和应力移动;对于天然晶体，只能发生旋转再结晶。在每一个重结晶制度的重结晶晶粒尺寸是唯一的有关所施加的应力，从而产生两个不同的偏应力计，这不应该不加区别地应用于天然构造岩，以确定岩石圈或地幔偏应力。实验结果用杂质控制晶界迁移的Lucke et Stuwe理论进行了解释。
Single crystals of pure and impure halite have been dynamically recrystallized during compression creep at temperatures between 250° and 790°C and stresses between 1.5 and 120 bars. Recrystallization was found to occur by two different mechanisms: at lower temperatures and stresses the new grains result from the rotation of subgrains without grain boundary migration (rotation recrystallization), and at higher temperatures and stresses the final texture results from the migration of the high-angle grain boundaries of the rotated subgrains. Migration recrystallization was shown to occur for critical stress and temperature conditions, allowing rapid grain boundary migration. A curve separates the two domains in the σ, T plane and moves to higher temperatures and stresses for crystals of higher impurity content; for natural crystals, only rotation recrystallization can occur. In each recrystallization regime the recrystallized grain size is uniquely related to the applied stress, thus yielding two different geopiezometers, which should not be applied indiscriminately to natural tectonites to determine lithospheric or mantle deviatoric stresses. The experimental results are interpreted by the Lucke et Stuwe theory for impurity-controlled grain boundary migration.