Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths
Measurement and Extraction of Parasitic Parameters of Quasi-Vertical Schottky Diodes at Submillimeter Wavelengths
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DOI：
10.1109/lmwc.2019.2918295
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发表时间：
2019-06
影响因子：
3
通讯作者：
S. Nadri;Linli Xie;M. Jafari;M. Bauwens;A. Arsenovic;R. Weikle
中科院分区：
文献类型：
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作者：
S. Nadri;Linli Xie;M. Jafari;M. Bauwens;A. Arsenovic;R. Weikle
这封信报告的方法提取寄生等效电路模型参数在亚毫米波频率。研究的设备是准垂直砷化镓肖特基二极管集成在硅上。该技术利用WR-2.2频段（325-500 GHz）共面波导馈电无源结构的测量，这些结构与二极管制造在同一晶片上。这些结构由短路和开路终端组成，允许直接测量与器件相关的寄生电路元件。使用这种方法获得的寄生元件的值与文献中报道的具有可比几何形状的二极管的值一致。
This letter reports on a method for extracting parasitic equivalent-circuit model parameters at submillimeter-wave frequencies. The devices investigated are quasi-vertical gallium arsenide Schottky diodes integrated on silicon. The technique utilizes measurements of coplanar waveguide-fed passive structures in the WR-2.2 band (325–500 GHz), which are fabricated on the same wafer as the diodes. These structures consist of short- and open-circuited terminations that allow direct measurement of the parasitic circuit elements associated with the device. The values of the parasitic elements obtained using this method are in agreement with the values reported in the literature for diodes of comparable geometry.