Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wells
Band-mixing effects and excitonic optical properties in GaAs quantum wire structures-comparison with the quantum wells
复制标题
GaAs量子线结构中的能带混合效应和激子光学性质——与量子阱的比较
DOI：
10.1109/3.7107
复制
发表时间：
1988
影响因子：
2.5
通讯作者：
L. Coldren
中科院分区：
文献类型：
--
作者：
I. Suemune;L. Coldren
通过考虑价带的带混合效应，分析了量子线结构中激子的性质。对于GaAs/AlGaAs量子阱，最低重空穴子带中心处的线方向有效质量值为0.027 m/sub 0/。这种减少的有效质量和相关的非抛物线的子带结构中起着重要的作用，在确定激子的性质。使用这些结果，对于具有50 A*50 AA横截面的GaAs/Al/sub 0.4/Ga/sub 0.6/As QWS，对折射率值的最大激子贡献估计为0.59，即体值的17.4%。该值比50-AA量子阱中的值大六倍。在垂直于异质界面的电场为8 × 10 ~ 4/ V/cm时，最大折射率变化比该值大30%。>
The excitonic properties in quantum-wire structures (QWS) are analyzed by taking into account the band-mixing effects in the valence band of the structure. The effective mass value in the wire direction at the zone center of the lowest heavy-hole-like subband is found to be as small as 0.027 m/sub 0/ for GaAs/AlGaAs QWS. This reduced effective mass and the related nonparabolicity of the subband structure play a significant role in determining the exciton properties. Using these results, the maximum excitonic contribution to the refractive index value is estimated to be 0.59, i.e. 17.4% of the bulk value for a GaAs/Al/sub 0.4/Ga/sub 0.6/As QWS with a 50 A*50 AA cross section. This value is six times larger than that in the 50-AA quantum well. With an electric field of 8*10/sup 4/ V/cm perpendicular to the heterointerface, a maximum refractive index change 30% larger than this value is estimated. >
影响因子：
4
作者：
ARAKAWA, Y;SAKAKI, H
通讯作者：
SAKAKI, H