Composition Limits of Stability of PbTe
Composition Limits of Stability of PbTe
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DOI：
10.1063/1.1731029
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发表时间：
1960-06
影响因子：
4.4
通讯作者：
R. F. Brebrick;R. S. Allgaier
中科院分区：
文献类型：
--
作者：
R. F. Brebrick;R. S. Allgaier
在富铅或富Te锭的存在下，在真空硅管中对PbTe单晶进行了热处理。在404 ~ 885℃的热处理温度下，铸锭成分呈现固态、液态和气相共存的状态。在给定的温度下，PbTe晶体在平衡状态下尽可能富含Pb或Te。晶体淬火后，在室温和77°K下测量电阻率和霍尔常数。在约860℃以下，用富铅锭加热的晶体为n型。在所有热处理温度下，用富Te锭加热的都是p型。将室温下电子和空穴浓度的差值与热处理温度下铅和碲原子浓度的差值相等，用于构建PbTe固相线。PbTe的稳定范围在775℃附近达到最大值，在49.994 ~ 50.013 at之间。% Te，分别对应3.3×1018电子/cm3和7.6×1018空穴/cm3的载流子浓度。在富铅或富Te锭的存在下，在真空硅管中对PbTe单晶进行了热处理。在404 ~ 885℃的热处理温度下，铸锭成分呈现固态、液态和气相共存的状态。在给定的温度下，PbTe晶体在平衡状态下尽可能富含Pb或Te。晶体淬火后，在室温和77°K下测量电阻率和霍尔常数。在约860℃以下，用富铅锭加热的晶体为n型。在所有热处理温度下，用富Te锭加热的都是p型。将室温下电子和空穴浓度的差值与热处理温度下铅和碲原子浓度的差值相等，用于构建PbTe固相线。PbTe的稳定范围在775℃附近达到最大值，在49.994 ~ 50.013 at之间。% Te，对应于载体浓度…
Single crystals of PbTe have been heat‐treated in evacuated silica tubes in the presence of Pb‐ or Te‐rich ingots. At the heat‐treatment temperatures, which ranged between 404° and 885°C, the ingot compositions were such that solid PbTe, liquid, and vapor phases coexisted. At a given temperature, the PbTe crystals were therefore as rich in Pb or Te as possible at equilibrium. After quenching the crystals, the resistivity and Hall constant were measured at room temperature and 77°K. Below about 860°C, crystals heated with Pb‐rich ingots were n type. Those heated with Te‐rich ingots were p type at all heat‐treatment temperatures. The difference in the concentrations of electrons and holes at room temperature was taken as equal to the difference in concentration of lead and tellurium atoms at the heat‐treatment temperature and was used to construct the PbTe solidus lines. The range of stability of PbTe is a maximum near 775°C and is between 49.994 and 50.013 at.% Te, corresponding to carrier concentrations of 3.3×1018 electron/cm3 and 7.6×1018 holes/cm3, respectively.Single crystals of PbTe have been heat‐treated in evacuated silica tubes in the presence of Pb‐ or Te‐rich ingots. At the heat‐treatment temperatures, which ranged between 404° and 885°C, the ingot compositions were such that solid PbTe, liquid, and vapor phases coexisted. At a given temperature, the PbTe crystals were therefore as rich in Pb or Te as possible at equilibrium. After quenching the crystals, the resistivity and Hall constant were measured at room temperature and 77°K. Below about 860°C, crystals heated with Pb‐rich ingots were n type. Those heated with Te‐rich ingots were p type at all heat‐treatment temperatures. The difference in the concentrations of electrons and holes at room temperature was taken as equal to the difference in concentration of lead and tellurium atoms at the heat‐treatment temperature and was used to construct the PbTe solidus lines. The range of stability of PbTe is a maximum near 775°C and is between 49.994 and 50.013 at.% Te, corresponding to carrier concentrations o...