Electronic Structure of the Silicon Vacancy Color Center in Diamond
Electronic Structure of the Silicon Vacancy Color Center in Diamond
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DOI：
10.1103/physrevlett.112.036405
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发表时间：
2014-01-24
影响因子：
8.6
通讯作者：
Becher, Christoph
中科院分区：
文献类型：
--
作者：
Hepp, Christian;Mueller, Tina;Becher, Christoph
金刚石中的负电荷硅空位（SiV）色中心最近被证明适合于明亮和稳定的单光子发射。然而，到目前为止，它的电子结构仍然难以捉摸。我们在这里通过将单个SiV缺陷暴露在磁场中来探索电子结构，在磁场中，塞曼效应解除了磁亚能级的简并。在低应变参考样品中，单中心和SiV系综的相似响应证明了我们制造几乎完美的单SiV的能力，揭示了缺陷电子性质的真实本质。我们使用群论方法对电子态进行建模，结果与实验观察结果非常吻合。此外，该模型正确地预测了单SiV中心的极化测量结果，并解释了最近发现的SiV缺陷的自旋选择性激发。
The negatively charged silicon vacancy (SiV) color center in diamond has recently proven its suitability for bright and stable single photon emission. However, its electronic structure so far has remained elusive. We here explore the electronic structure by exposing single SiV defects to a magnetic field where the Zeeman effect lifts the degeneracy of magnetic sublevels. The similar responses of single centers and a SiV ensemble in a low strain reference sample prove our ability to fabricate almost perfect single SiVs, revealing the true nature of the defect's electronic properties. We model the electronic states using a group-theoretical approach yielding a good agreement with the experimental observations. Furthermore, the model correctly predicts polarization measurements on single SiV centers and explains recently discovered spin selective excitation of SiV defects.