Total-ionizing-dose tolerance evaluation of an optoelectronic field programmable gate array VLSI during operation
Total-ionizing-dose tolerance evaluation of an optoelectronic field programmable gate array VLSI during operation
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光电现场可编程门阵列 VLSI 运行期间的总电离剂量耐受性评估
DOI：
10.1109/icfpt52863.2021.9609910
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发表时间：
2021
期刊：
影响因子：
--
通讯作者：
Watanabe Minoru
中科院分区：
文献类型：
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作者：
Ito Hirotoshi;Watanabe Minoru
本文介绍了光电现场可编程门阵列（FPGA）在工作过程中的总电离剂量耐受性评估。采用0.18标准互补金属氧化物半导体（CMOS）工艺技术制作了光电FPGA。在2.27-2.28 kGy/h剂量率下，用60 Co γ射线源对光电FPGA进行了总电离剂量耐受性实验。结果表明，光电FPGA在2.27-2.28 kGy/h剂量率下能正常工作，光电FPGA的总电离剂量容限大于80 Mrad。总电离剂量耐受性结果比典型的抗辐射超大规模集成电路（VLSI）和典型的抗辐射FPGA高80倍。
This paper presents the total-ionizing-dose tolerance evaluation of an optoelectronic field programmable gate array (FPGA) during operation. The optoelectronic FPGA was fabricated using 0.18standard complementary metal oxide semiconductor (CMOS) process technology. An experiment assessing the total-ionizing-dose tolerance of the optoelectronic FPGA was conducted at a 2.27–2.28 kGy/h dose rate using a60Co gamma radiation source. Results clarified that the optoelectronic FPGA can function correctly under a 2.27–2.28 kGy/h dose rate and that the total-ionizing-dose tolerance of the optoelectronic FPGA is greater than 80 Mrad during operation. The total-ionizing-dose tolerance result is 80 times higher than that of typical radiation-hardened very large scale integrated circuits (VLSIs) and typical radiation-hardened FPGAs.