Synthesis and Electrical Characterization of Thin Films of PT and PZT Made from a Diol‐Based Sol‐Gel Route
Synthesis and Electrical Characterization of Thin Films of PT and PZT Made from a Diol‐Based Sol‐Gel Route
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基于二醇的溶胶-凝胶路线制备 PT 和 PZT 薄膜的合成和电学表征
DOI：
10.1111/j.1151-2916.1996.tb08142.x
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发表时间：
1996
影响因子：
3.9
通讯作者：
S. J. Milne
中科院分区：
文献类型：
--
作者：
Y. Tu;M. Calzada;N. Phillips;S. J. Milne
采用三水合醋酸铅和二异丙氧基二（乙酰丙酮）钛的丙二醇、丁二醇或戊二醇溶液制备钛酸铅（PT）溶胶。以四丙氧基锆为锆源，采用丙二醇溶液制备了PbZr0.53Ti0.47O3（PZT）薄膜的前驱体溶胶。通过将溶胶旋涂到硅和镀铂硅衬底上形成膜;通过采用最终烧制温度为600-700°C的两阶段加热方案将所得凝胶层转化为陶瓷膜。薄膜结晶，微观结构的发展，和电气性能的信息，这两种组合物。表面光滑、无裂纹的单层膜的极限厚度为0.1 μm。PT薄膜表现出“线性”极化-电场（P-E）响应，而PZT薄膜产生特征铁电P-E磁滞回线。厚度为0.5 μm的单层PZT薄膜的反射极化（Pr）值为1.34 μC·Cm−2，矫顽场（Ec）为1.45 kV·Cm−2;相对介电常数（Δ r）和损耗因子（D）分别为1.1250和0.07。对于1 μm单层PZT膜，相应的值为Pr = 19 μC <$Cm−2，Ec = 40 kV <$Cm−2，Δ r = 750，D= 0.03。
Lead titanate (PT) sols were prepared using propanediol, butanediol, or pentanediol solutions of lead acetate trihydrate and titanium diisopropoxide bis(acetylacetonate). Precursor sols for PbZr0.53Ti0.47O3 (PZT) films were prepared from propanediol solutions, with zirconium tetrapropoxide being used as the zirconium source. Films were formed by spin-coating the sols onto silicon and platinized silicon substrates; the resulting gel layers were converted to ceramic films by adopting a two-stage heating schedule with final firing temperatures of 600–700°C. Information on film crystallization, microstructure development, and electrical properties is presented for both compositions. The limiting thickness of surface-smooth crack-free single-layer films was ∼1 μm. The PT films exhibited a “linear” polarization-electric field (P-E) response, while the PZT films gave rise to characteristic ferroelectric P-E hysteresis loops. A 0.5 μm thick single-layer PZT film exhibited remanent polarization (Pr) values of ∼34 μC·Cm−2, with a coercive field (Ec) of ∼45 kV·Cm−2; the relative permittivity (ɛr) and the dissipation factor (D) were ∼1250 and 0.07. For a 1 μm single-layer PZT film, the respective values were Pr∼19 μC∼Cm−2, Ec∼40 kV∼Cm−2, ɛr∼750, and D= 0.03.