Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature
Resonant tunneling oscillations in a GaAs‐AlxGa1−xAs heterostructure at room temperature
复制标题
室温下 GaAs-AlxGa1-xAs 异质结构中的共振隧道振荡
DOI：
10.1063/1.95574
复制
发表时间：
1985
影响因子：
4
通讯作者：
H. Morkoç
中科院分区：
文献类型：
--
作者：
T. J. Shewchuk;P. C. Chapin;P. Coleman;W. Kopp;R. Fischer;H. Morkoç
这封信报道了在室温下通过双势垒GaAs-AlxGa 1-xAs-GaAs-AlxGa 1-xAs-GaAs结构的共振隧穿负微分电阻（NDR）的首次观察。NDR产生射频振荡在300 K的同轴电缆电路，比较密切的标准1 N3716隧道二极管。
This letter reports the first observation of resonant tunneling negative differential resistance (NDR) through a double barrier GaAs‐AlxGa1−xAs ‐GaAs‐AlxGa1−x As‐GaAs structure at room temperature. The NDR yields radio frequency oscillations at 300 K in a coaxial cable circuit that compare closely to those of a standard 1N3716 tunnel diode.