Comparison of crystal structure and electrical properties of tetragonal and rhombohedral Pb(Zr,Ti)O3 films prepared at low temperature by pulsed-metalorganic chemical vapor deposition
Comparison of crystal structure and electrical properties of tetragonal and rhombohedral Pb(Zr,Ti)O3 films prepared at low temperature by pulsed-metalorganic chemical vapor deposition
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脉冲金属有机化学气相沉积低温制备四方晶系和菱方晶系Pb(Zr,Ti)O3薄膜的晶体结构和电学性能比较
DOI：
10.1063/1.1510169
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发表时间：
2002
影响因子：
3.2
通讯作者：
K. Saito
中科院分区：
文献类型：
--
作者：
H. Funakubo;Kouji Tokita;T. Oikawa;M. Aratani;K. Saito
采用脉冲金属有机物化学气相沉积（pulsedmetalorganicchemicalvapordeposition，pulsedMOCVD）方法，在（111）Pt/Ti/SiO2/Si衬底上，在580 °C ~ 395°C的不同沉积温度下制备了四方和菱方Pb（Zr，Ti）O3 [PZT]薄膜。 随着沉积温度的降低，薄膜的取向由（111）向（100）和/或（001）转变，但在395 °C时仍能得到结晶良好的PZT相。 随着沉积温度的降低，晶格常数几乎不变，这表明薄膜中的Zr和Ti元素被纳入PZT相。当沉积温度降低时，漏电流密度随着表面粗糙度的降低而降低，特别是对于四元PZT薄膜。剩余极化率（Pr）随沉积温度的降低而持续降低，直到395 °C，但即使在395 °C下仍高于20 μC/cm 2。 具体地，四氢呋喃膜显示出良好的方形度下降到4。
The crystal structure and the electrical properties were systematically compared for tetragonal and rhombohedral Pb(Zr,Ti)O3 [PZT] films prepared at various deposition temperatures from 580 °C to 395 °C on (111)Pt/Ti/SiO2/Si substrates by pulsed-metalorganic chemical vapor deposition (pulsed MOCVD). Film orientation changed from (111) to (100) and/or (001) with the decrease in the deposition temperature, but the well-crystallized PZT phase was obtained down to 395 °C. The lattice parameter was almost constant with decreasing deposition temperature, suggesting that the Zr and Ti elements in the films were incorporated into the PZT phase. When the deposition temperature decreased, the leakage current density decreased together with a decrease in surface roughness, especially for tetragonal PZT films. Remanent polarization (Pr) continuously decreased with decreasing deposition temperature down to 395 °C, but was above 20 μC/cm2 even at 395 °C. Specifically, the tetragonal film shows good squareness down to 4...