Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3
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DOI：
10.1038/nmat1614
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发表时间：
2006-04-01
期刊：
影响因子：
41.2
通讯作者：
Waser, R
中科院分区：
文献类型：
--
作者：
Szot, K;Speier, W;Waser, R
多元氧化物材料的电性质的巨大变化，从绝缘，通过半导体到金属行为，已经引起了在纳米尺度上调制高密度电子存储器件的电子性质的想法。一个特别有前途的方面似乎是钙钛矿的能力，通过施加适当的电场，提供非金属和金属行为之间的电导率的快速切换。在这里，我们表明，开关行为是一个固有的功能，自然发生的位错在单晶的原型三元氧化物，SrTiO 3。这种现象是源于氧含量的局部调制，并与自掺杂能力的前过渡金属氧化物。我们的结果表明，扩展缺陷（例如位错）可以充当双稳态纳米线，并为兆兆位存储器件带来技术希望。
The great variability in the electrical properties of multinary oxide materials, ranging from insulating, through semiconducting to metallic behaviour, has given rise to the idea of modulating the electronic properties on a nanometre scale for high-density electronic memory devices. A particularly promising aspect seems to be the ability of perovskites to provide bistable switching of the conductance between non-metallic andmetallic behaviour by the application of an appropriate electric field. Here we demonstrate that the switching behaviour is an intrinsic feature of naturally occurring dislocations in single crystals of a prototypical ternary oxide, SrTiO3. The phenomenon is shown to originate from local modulations of the oxygen content and to be related to the self-doping capability of the early transition metal oxides. Our results show that extended defects, such as dislocations, can act as bistable nanowires and hold technological promise for terabit memory devices.