Ultrafast graphene photodetector
Ultrafast graphene photodetector
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DOI：
10.1038/nnano.2009.292
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发表时间：
2009-12-01
影响因子：
38.3
通讯作者：
Avouris, Phaedon
中科院分区：
文献类型：
--
作者：
Xia, Fengnian;Mueller, Thomas;Avouris, Phaedon
尽管石墨烯具有令人印象深刻的光学特性（7，8），但到目前为止，石墨烯的研究主要集中在电子（1-6）而不是光子应用上。这些包括它在宽波长范围内吸收近似2%入射光的能力，尽管只有一个原子厚（7）。在这里，我们展示了由单层和少层石墨烯制成的超快晶体管光电探测器。的光响应不退化的光强度调制高达40 GHz，进一步的分析表明，固有带宽可能超过500 GHz。由于石墨烯独特的光子和电子特性，石墨烯中光生载流子的产生和传输与由常规半导体制成的光电探测器中的光生载流子的产生和传输根本不同。这导致了非常高的带宽，零源漏偏置和暗电流操作，以及良好的内部量子效率。
Graphene research so far has focused on electronic(1-6) rather than photonic applications, in spite of its impressive optical properties(7,8). These include its ability to absorb similar to 2% of incident light over a broad wavelength range despite being just one atom thick(7). Here, we demonstrate ultrafast transistor-based photodetectors made from single- and few-layer graphene. The photoresponse does not degrade for optical intensity modulations up to 40 GHz, and further analysis suggests that the intrinsic bandwidth may exceed 500 GHz. The generation and transport of photocarriers in graphene differ fundamentally from those in photodetectors made from conventional semiconductors as a result of the unique photonic and electronic properties of the graphene. This leads to a remarkably high bandwidth, zero source-drain bias and dark current operation, and good internal quantum efficiency.