Chemical Vapor Deposition of Epitaxial Silicon‐Germanium from Silane and Germane I . Kinetics
Chemical Vapor Deposition of Epitaxial Silicon‐Germanium from Silane and Germane I . Kinetics
复制标题
硅烷和锗烷外延硅锗的化学气相沉积 I. 动力学
DOI：
10.1149/1.2050014
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发表时间：
1995
影响因子：
3.9
通讯作者：
R. Reif
中科院分区：
文献类型：
--
作者：
S. Jang;K. Liao;R. Reif
The authors report measured germanium incorporation and growth rate for Si{sub 1{minus}x}Ge{sub x} grown by very low pressure chemical vapor deposition in the temperature range of 570 to 700 C. The growth rate of Si{sub 1{minus}x}Ge{sub x} shows different germanium dependencies at different temperatures. They found that the growth rate decrease at 700 C and increase at 570 C with the addition of germanium. The observed nonlinear Arrhenius behavior of the growth rate as a function of germanium content suggests that germanium modifies the activation energy for Si{sub 1{minus}x}Ge{sub x} deposition, possibly by enhancing hydrogen desorption. The possible rate-limiting steps controlling Si{sub 1{minus}x}Ge{sub x} deposition were examined by varying the hydrogen flow rate and the total deposition pressure, and it was found that hydrogen suppresses Si{sub 1{minus}x}Ge{sub x} deposition rate when the germanium content is low. The consistent growth-rate enhancement observed by increasing total deposition pressure is dependent on germanium incorporation and becomes more pronounced as the germanium content is increased. A model is proposed to explain the observations.
