Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques
Apparatus for investigating metalorganic chemical vapor deposition-grown semiconductors with ultrahigh-vacuum based techniques
复制标题
采用超高真空技术研究金属有机化学气相沉积生长的半导体的设备
DOI：
10.1063/1.1711148
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发表时间：
2004
影响因子：
1.6
通讯作者：
F. Willig
中科院分区：
文献类型：
--
作者：
T. Hannappel;S. Visbeck;L. Töben;F. Willig
本文详细描述了一种装置，用于将样品从金属有机化学气相沉积（MOCVD）反应器转移到超高真空（UHV）室而不引入任何污染。样品的表面在转移过程中没有变化，这一点由首先在MOCVD反应器中（即原位）测量的相同反射差（RD）光谱证实，然后在特高压室中再次测量。利用先前的设备，半导体可以在MOCVD反应器中生长，然后可以用任何表面科学所需的工具进行研究，特别是那些需要特高压的工具。所有在特高压下收集的数据都可以与MOCVD反应器中已经测量到的RD谱相识别。本文介绍了在MOCVD反应器中生长的III-V型半导体的超高压数据收集的几个例子。它们说明了这里描述的仪器的简易性和可靠性，用于无污染的样品转移。这些信号是特别为人类提供的。
An apparatus is described here in detail for the transfer of a sample from a metalorganic chemical vapor deposition (MOCVD) reactor to an ultrahigh-vacuum (UHV) chamber without introducing any contamination. The surface of the sample does not change during transfer as is borne out by the identical reflectance difference (RD) spectrum measured first in the MOCVD reactor, i.e., in situ, and afterwards again in the UHV chamber. Making use of the earlier apparatus a semiconductor can be grown in the MOCVD reactor and can afterwards be investigated with any desired tool of surface science, in particular also those that require UHV. All the data collected in UHV can be identified with the RD spectrum measured already in the MOCVD reactor. Several examples are presented here for data collection in UHV on III–V semiconductors grown in the MOCVD reactor. They illustrate the ease and reliability of the here described apparatus for contamination-free sample transfer. Signals are presented in particular for the genui...