Oxidation of Nb/Nb5Si3In Situ Composites Fabricated via Spark Plasma Sintering with Al Addition

Oxidation of Nb/Nb5Si3In Situ Composites Fabricated via Spark Plasma Sintering with Al Addition
复制标题

放电等离子烧结加铝 Nb/Nb5Si3 原位复合材料的氧化

DOI:
10.4028/www.scientific.net/amm.376.49
复制
发表时间:
2013
期刊:
影响因子:
--
通讯作者:
Junping Yao
Junping Yao
中科院分区:
--
文献类型:
--
作者:
W. Long;X. Zou;Wei Dong Wang;Junping Yao

文献摘要

参考文献

相似文献

以Nb、Si、Al元素粉末为原料,采用放电等离子烧结技术制备了致密Nb/Nb 5Si 3复合材料。通过扫描电子显微镜、X射线衍射和电子探针分析了合成复合材料的微观结构。结果表明,复合材料由残余Nb颗粒相和Nb 5Si 3相组成。Al的加入对Nb/Nb 5Si 3原位复合材料的显微组织有明显的影响,促进了Al 3 Nb 10 Si 3相的形成。Nb/Nb 5Si 3原位复合材料的抗氧化性能随Al添加量的增加而显著提高。Nb-20 Si复合材料在800°C下暴露于空气中4 h时表现出Pesting氧化行为。Nb-20 Si-10Al和Nb-20 Si-15 Al复合材料在暴露于空气中约10 h后未表现出这种有害的氧化行为。当Al含量为15at%时,复合材料的抗氧化性能最好。
Dense Nb/Nb5Si3 composites were fabricated via spark plasma sintering technology using Nb, Si, and Al elemental powders as raw materials. The microstructures of the synthesised composites were analysed through scanning electron microscopy, X-ray diffraction, and electron probe microanalysis. The results show that the composites consisted of residual Nb particle phase and Nb5Si3 phase. The microstructure of the Nb/ Nb5Si3 in situ composites was evidently affected by Al addition, which prompted the formation of the Al3Nb10Si3 phase. The oxidation resistance of the Nb/Nb5Si3 in situ composites significantly improved with the increase in Al addition. Pesting oxidation behaviour was exhibited at 800°C by the Nb-20Si composites when exposed to air for 4h. This pest oxidation behaviour is not exhibited by the Nb-20Si-10Al and Nb-20Si-15Al composites after exposure to air for ~10h. The composite exhibits the best oxidation resistance at 15at% Al.
DOI: 10.1016/j.msea.2008.04.123
发表时间: 2009-06
影响因子: 6.4
作者:
S. Miura;Yuki Murasato;Y. Sekito;Yukiyoshi Tsutsumi;K. Ohkubo;Y. Kimura;Y. Mishima;T. Mohri
通讯作者: S. Miura;Yuki Murasato;Y. Sekito;Yukiyoshi Tsutsumi;K. Ohkubo;Y. Kimura;Y. Mishima;T. Mohri
DOI: 10.1016/s0966-9795(01)00042-5
发表时间: 2001-07-01
期刊: INTERMETALLICS
影响因子: 4.4
作者:
Murakami, T;Sasaki, S;Kitahara, A
通讯作者: Kitahara, A