Low-Temperature and Solution-Processable Zinc Oxide Transistors for Transparent Electronics
Low-Temperature and Solution-Processable Zinc Oxide Transistors for Transparent Electronics
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用于透明电子产品的低温且可溶液加工的氧化锌晶体管
DOI：
10.1021/acsomega.7b01420
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发表时间：
2017-12-01
期刊：
影响因子：
4.1
通讯作者：
Wang, Xianbao
中科院分区：
文献类型：
--
作者：
Jiang, Li;Li, Jinhua;Wang, Xianbao
氧化锌薄膜晶体管（ZnO thin film transistors，TFT）由于其高性能、易制造、低成本等优点，在逻辑电路、显示器、紫外探测器、生物传感器等领域有着广泛的应用前景。溶液法是实现氧化物半导体TFT低成本、大规模制造的重要技术。然而，可溶液加工的ZnO TFT的一个关键挑战是实现高载流子迁移率的相对较高的加工温度（≥500 °C）。在此，我们在≤300 °C的退火温度下制备了简单、低成本、可溶液加工的ZnO TFT。采用旋涂法制备了致密的多晶ZnO薄膜。当退火温度为300 °C时，ZnO薄膜的电子迁移率达到最大值11 cm 2/V s，开关比大于107。在以前报道的溶液可加工的未掺杂ZnO TFT中，迁移率非常高，甚至优于一些在低温下制造的高成本的铟掺杂ZnO TFT。研究发现，氧空位机制控制着ZnO薄膜中的电子输运以及ZnO薄膜与SiO2栅绝缘层的界面行为，进而控制着器件的性能。
Zinc oxide (ZnO) thin-film transistors (TFTs) have many promising applications in the areas of logic circuits, displays, ultraviolet detectors, and biosensors due to their high performances, facile fabrication processing, and low cost. The solution method is an important technique for low-cost and large fabrication of oxide semiconductor TFTs. However, a key challenge of solution-processable ZnO TFTs is the relatively high processing temperature (≥500 °C) for achieving high carrier mobility. Here, facile, low-cost, and solution-processable ZnO TFTs were fabricated under the annealing temperature of ≤300 °C. Dense and polycrystalline ZnO films were deposited by the spin-coating method. The ZnO TFTs showed the maximum electron mobility of 11 cm2/V s and a high on/off ratio of >107 when the ZnO thin films were annealed at 300 °C. The mobility was extremely high among solution-processable undoped ZnO TFTs reported previously, even better than some high-cost indium-doped ZnO TFTs fabricated at low temperature. Furthermore, it is found that the mechanism of oxygen vacancies dominates the electron transport in ZnO thin film and interface behaviors of ZnO thin film and SiO2 gate insulator, and then dominates the performances of devices.