Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs
Type II InAs/GaSb superlattices for high-performance photodiodes and FPAs
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DOI：
10.1117/12.512556
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发表时间：
2003-08
期刊：
影响因子：
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通讯作者：
M. Razeghi;Yajun Wei;J. Bae;A. Gin;A. Hood;Jutao Jiang;J. Nah
中科院分区：
文献类型：
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作者：
M. Razeghi;Yajun Wei;J. Bae;A. Gin;A. Hood;Jutao Jiang;J. Nah
报道了截止波长为8 μm的II型InAs/GaSb超晶格材料和光伏探测器的最新进展。对于3 μm厚的p-i-n光电二极管，即使在-3V的反向偏压下也没有观察到隧穿电流的开启。在液氮温度下，300 K 2 π视场下，热限零偏探测率为2~3×1011 cm·Hz 1/2/W，电流响应率为2~3 A/W，平均量子效率为~ 50%。使用SiO2的初始钝化已显示在-1 V的反向偏压下将暗电流降低约30%。相同的检测器结构用于具有硅读出集成电路的焦平面阵列。在液氮温度下，以256×256的格式证明了成像的概念证明。
The authors report the most recent progress in Type II InAs/GaSb superlattice materials and photovoltaic detectors developed for focal plane array applications with a cutoff wavelength of ~8 μm. No turn-on of tunneling current was observed even at a reverse bias of -3 V for a 3 μm thick p-i-n photodiodes. The thermally-limited zero bias detectivity under 300 K 2 π FOV was 2~3×1011 cm•Hz1/2/W at liquid nitrogen temperature, with a current responsivity of 2~3 A/W and a mean quantum efficiency of ~50%. Initial passivation using SiO2 has shown to decrease the dark current by ~30% at a reverse bias of -1 V. The same detector structure was used for focal plane arrays with silicon readout integrated circuit. Concept proof of imaging was demonstrated with a format of 256×256 at liquid nitrogen temperature.