A critical evaluation of low-energy electron impact cross sections for plasma processing modeling. II: Cl4, SiH4, and CH4

A critical evaluation of low-energy electron impact cross sections for plasma processing modeling. II: Cl4, SiH4, and CH4
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DOI:
10.1007/bf01447255
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发表时间:
1992
影响因子:
3.6
通讯作者:
W. Morgan
W. Morgan
中科院分区:
工程技术3区
文献类型:
--
作者:
W. Morgan

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对CF4、SiH4和CH1的低能电子碰撞截面的现有信息进行了回顾和批判性评价。感兴趣的是动量转移,旋转,振动和电子激发,离解,附着和电离的横截面。在可行的情况下,确定推荐的横截面。大多数的横截面审查已确定的群技术,其中横截面进行调整的基础上预测和测量的电子传输,或群,系数的比较。
The available information on low-energy electron impact cross sections for CF4, SiH4, and CHl is reviewed and critically evaluated. Of interest are the cross sections for momentum transfer, rotational, vibrational, and electronic excitation, dissociation, and attachment and ionization. Recommended cross sections are identified where feasible. Most of the cross sections reviewed have been determined by swarm techniques whereby cross sections are adjusted based on a comparison of predicted and measured electron transport, or swarm, coefficients.