Mobility of 2D Electrons on Pure 4He and on 3He–4He Dilute Solution
Mobility of 2D Electrons on Pure 4He and on 3He–4He Dilute Solution
复制标题
纯 4He 和 3He-4He 稀溶液上二维电子的迁移率
DOI:
10.1007/s10909-013-0956-9
复制
发表时间:
2014
影响因子:
2
通讯作者:
Yosuke Yatsuyama
中科院分区:
文献类型:
--
作者:
H. Yayama;Yosuke Yatsuyama
The mobility of 2D electrons on pure4He and on 0.5 % solution of3He in4He was investigated for different electron densities in the temperature range 0.12 to 1.3 K. The electrons in the same electron density show the same transition temperature from liquid state to Wigner crystal state in both pure4He and in the solution. In the high temperature range where the gas-scattering is dominant, the electrons show a smaller mobility in the solution than in the pure4He due to the electron collision with3He gas atoms which have a higher vapor pressure. In the middle temperature range where the ripplon-scattering is dominant, the mobility in the solution is smaller than in4He. This is explained by a smaller surface tension caused by3He atoms collected at the surface. In the low temperature range where electrons are in the Wigner crystal state, the mobility gradually increases with decreasing temperature in the solution, while it stays almost constant in the pure4He. The mobility increase is more pronounced in the low electron density. The results are qualitatively in agreement with the existing theory which includes the bulk3He quasiparticle reflection from surface dimples and the effect of the surface layer of3He atoms.
DOI:
--
发表时间:
2002
期刊:
J. Low Temp. Phys 126
影响因子:
--
作者:
O.Kirichek;M.Saitoh;K.Kono
通讯作者:
K.Kono
DOI:
--
发表时间:
2006
期刊:
J. Phys. Soc. Jpn. 75
影响因子:
--
作者:
Y. Monarkha;K. Kono
通讯作者:
K. Kono