Comprehensive Analysis of Electron Evaporative Cooling in Double-Barrier Semiconductor Heterostructures
Comprehensive Analysis of Electron Evaporative Cooling in Double-Barrier Semiconductor Heterostructures
复制标题
双势垒半导体异质结构电子蒸发冷却的综合分析
DOI：
10.1103/physrevapplied.17.014001
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发表时间：
2022
影响因子：
4.6
通讯作者：
Hirakawa Kazuhiko
中科院分区：
文献类型：
--
作者：
Bescond Marc;Dangoisse Guillaume;Zhu Xiangyu;Salhani Chloe;Hirakawa Kazuhiko
基于全量子输运模拟，本文对双势垒半导体异质结电子制冷机的蒸发冷却过程进行了全面的研究。该模型自洽地求解了非平衡绿色函数框架和热方程，能够计算器件内部的电子温度和电化学势。通过研究这些热力学参数作为势垒厚度和高度的函数的依赖关系，我们回答了关于固态系统中蒸发冷却的公开问题，并给出了一个明确的配方，以达到高电子制冷。特别是，模拟结果表明，最好的冷却时，获得（i）的设备操作在最大谐振条件;（ii）量子阱状态是对称耦合的接触。本研究结果揭示了半导体异质结构中蒸发冷却的物理特性，并将使电子冷却器件的发展朝着前所未有的性能加速。
Based on full quantum-transport simulations, we report a comprehensive study of the evaporative cooling process in a double-barrier semiconductor heterostructure thermionic refrigerator. Our model, which self-consistently solves the nonequilibrium Green’s function framework and the heat equation, is capable of calculating the electron temperature and electrochemical potential inside the device. By investigating the dependence of those thermodynamic parameters as a function of the barrier thickness and height, we answer open questions on evaporative cooling in solid-state systems, and give a clear recipe to reach high electron refrigeration. In particular, simulation results demonstrate that the best cooling is obtained when (i) the device operates at the maximum resonant condition; (ii) the quantum well state is symmetrically coupled with the contacts. The present results then shed light on physical properties of evaporative cooling in semiconductor heterostructures and will allow the development of thermionic cooling devices towards unprecedented performances to be sped up.
纳米线晶体管中供体电子声子散射的尺寸和温度依赖性
DOI：
--
发表时间：
2016
期刊：
影响因子：
--
作者：
M. Bescond;H. Carrillo;S. Berrada;N. Cavassilas;M. Lannoo
通讯作者：
M. Lannoo
异质结构中热电效应和热电子效应之间的相互作用
DOI：
10.1063/1.1499527
发表时间：
2000
期刊：
Heat Transfer: Volume 2
影响因子：
--
作者：
T. Zeng;Gang Chen
通讯作者：
Gang Chen