Low-threshold Raman laser from an on-chip, high-Q, polymer-coated microcavity.
Low-threshold Raman laser from an on-chip, high-Q, polymer-coated microcavity.
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DOI：
10.1364/ol.38.001802
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发表时间：
2013-06
期刊：
影响因子：
3.6
通讯作者：
Bei-Bei Li-Bei;Yun-Feng Xiao;Mengyao Yan;W. Clements;Q. Gong
中科院分区：
文献类型：
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作者：
Bei-Bei Li-Bei;Yun-Feng Xiao;Mengyao Yan;W. Clements;Q. Gong
我们研究了硅芯片上高 Q 聚二甲基硅氧烷 (PDMS) 涂层二氧化硅微球的受激拉曼发射。在这种混合结构中，随着PDMS涂层厚度的增加，回音壁模式的空间分布在PDMS层内移动，并且光发射从二氧化硅拉曼激光切换到PDMS拉曼激光。 PDMS 拉曼激光器的拉曼位移在 2900 cm(-1) 处测量，对应于块状 PDMS 材料最强的拉曼指纹。该 PDMS 拉曼激光的阈值被证明低至 1.3 mW。这种表面涂层高 Q 微腔的拉曼发射不仅提供了延长激光波长的途径，而且还显示出检测特定分析物的潜力。
We study the stimulated Raman emission of a high-Q polydimethylsiloxane (PDMS)-coated silica microsphere on a silicon chip. In this hybrid structure, as the thickness of the PDMS coating increases, the spatial distribution of the whispering gallery modes moves inside the PDMS layer, and the light emission switches from silica Raman lasing to PDMS Raman lasing. The Raman shift of the PDMS Raman laser is measured at 2900 cm(-1), corresponding to the strongest Raman fingerprint of bulk PDMS material. The threshold for this PDMS Raman lasing is demonstrated to be as low as 1.3 mW. This type of Raman emission from a surface-coated high-Q microcavity not only provides a route for extending lasing wavelengths, but also shows potential for detecting specific analytes.