Chemical patterning of ultrathin polymer films by direct-write multiphoton lithography.
Chemical patterning of ultrathin polymer films by direct-write multiphoton lithography.
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DOI：
10.1021/ja200313q
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发表时间：
2011-04-27
影响因子：
15
通讯作者：
Healy KE
中科院分区：
文献类型：
--
作者：
Jeon H;Schmidt R;Barton JE;Hwang DJ;Gamble LJ;Castner DG;Grigoropoulos CP;Healy KE
我们应用双光子激光烧蚀在环境条件下将亚衍射纳米级化学图案写入聚合物薄膜中。通过表面引发原子转移自由基聚合（SI-ATRP）在石英基底上制备了聚乙二醇甲基丙烯酸酯刷层，并利用倍频Ti：Sapphire飞秒激光的非线性双光子吸收烧蚀暴露了底层基底。聚合物薄膜的单次烧蚀阈值比石英衬底小约1.5倍，这允许在不损坏底层衬底的情况下图案化纳米级特征。在0.86 µm的1/e2激光光斑直径下，暴露基板的特征接近约80 nm，远低于400 nm光的衍射极限。烧蚀特征在化学上是不同的，并且易于进行化学改性。
We applied 2-photon laser ablation to write sub-diffraction nanoscale chemical patterns into ultrathin polymer films under ambient conditions. Poly(ethylene glycol) methacrylate brush layers were prepared on quartz substrates via surface initiated atom transfer radical polymerization (SI-ATRP) and ablated to expose the underlying substrate using the non-linear 2-photon absorbance of a frequency doubled Ti:Sapphire femtosecond laser. Single-shot ablation thresholds of polymer films were ~ 1.5 times smaller than that of a quartz substrate, which allowed patterning of nanoscale features without damage to the underlying substrate. At a 1/e2 laser spot diameter of 0.86 µm the features of exposed substrate approached ~ 80 nm, well below the diffraction limit for 400 nm light. Ablated features were chemically distinct and amenable to chemical modification.