Patterning concept for sculptured nanostructures with arbitrary periods
Patterning concept for sculptured nanostructures with arbitrary periods
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具有任意周期的雕刻纳米结构的图案化概念
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
B. Rauschenbach
中科院分区：
文献类型：
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作者：
C. Patzig;J. Zajadacz;K. Zimmer;R. Fechner;C. Khare;B. Rauschenbach
提出了一种存款具有任意结构间距的雕塑纳米结构的方法。基于掠射角沉积与前两步电子束光刻基板图案化的组合，该概念允许在基板上的任何预定位置处的人工种子上沉积纳米结构。由于掠射角沉积原理，在沉积期间适当的衬底旋转的帮助下，这些结构可以另外成形为几乎任意的形态。为了证明所提出的方法的可行性，分离的雕刻硅纳米结构的结构间距为（10-20）μm的组装。
An approach to deposit sculptured nanostructures with arbitrary interstructure spacing is presented. Based on a combination of glancing angle deposition with a preceding two-step electron beam lithography substrate patterning, the concept allows the deposition of nanostructures on artificial seeds at any predetermined place on the substrate. Due to the glancing angle deposition principle, with the help of an appropriate substrate rotation during deposition, those structures can additionally be shaped into nearly arbitrary morphologies. To demonstrate the feasibility of the proposed method, separated sculptured nanostructures of silicon with interstructure spacings of (10–20) μm were assembled.