Impact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performance
Impact of NBTI and PBTI in SRAM bit-cells: Relative sensitivities and guidelines for application-specific target stability/performance
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NBTI 和 PBTI 对 SRAM 位单元的影响：相对灵敏度和针对特定应用目标稳定性/性能的指南
DOI：
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发表时间：
2009
期刊：
影响因子：
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通讯作者：
C. Chuang
中科院分区：
文献类型：
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作者：
A. Bansal;R. Rao;Jae;S. Zafar;J. Stathis;C. Chuang
静态随机访问记忆（SRAM）的稳定性和性能特征由于负面和正偏置温度不稳定性的影响（NBTI（In pfet）和PBTI（NFET）），已知会随时间降解。在这项工作中，我们提供了对这些现象对SRAM细胞速度和稳定性的相对敏感性的见解。已经研究了一种现象对另一个现象的相对影响，对于不同的应用特定（高性能或低功率）SRAM细胞，已经研究了一种现象。我们表明，与密集的细胞相比，高性能SRAM细胞应由于PBTI而具有较低的VT漂移，以包含读取稳定性和访问时间。此外，与交替应力相比，最坏情况的静态应力构成了更严格的过程限制。
The stability and performance characteristics of Static Random Access Memories (SRAMs) are known to degrade with time due to the impact of Negative and Positive Bias Temperature Instabilities (NBTI (in PFET) and PBTI (in NFET)). In this work, we provide insights into relative sensitivities of these phenomena on speed and stability of SRAM cells. Relative impact on access time, stability, and tolerability of one phenomenon over another has been studied for different application specific (high-performance or low-power) SRAM cells. We show that high-performance SRAM cells should have lower VT drift due to PBTI compared with dense cells to contain READ stability and access time. Further, worst-case static stress poses tighter process constraints compared with alternating stress.