Defects in hydrothermally grown bulk ZnO
Defects in hydrothermally grown bulk ZnO
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水热法生长的块状 ZnO 中的缺陷
DOI：
10.1063/1.2757097
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发表时间：
2007
影响因子：
4
通讯作者：
S. M. Durbin
中科院分区：
文献类型：
--
作者：
H. Wenckstern;H. Schmidt;M. Grundmann;M. Allen;P. Miller;R. Reeves;S. M. Durbin
使用结电容光谱法对氧化银肖特基接触（势垒高度为 1.20eV，理想因子为 1.04）研究了水热生长的块状 ZnO（东京电波）。确定了两个主要的浅缺陷 T1 和 T2，其热活化能分别为 13 和 52meV。在导带下方约 320meV 处发现两个紧密分布的深缺陷能级 E3∕E3'，其浓度（mid-1014cm−3）比浅供体的浓度更高。 4K 光致发光显示主要发射来自与三个中性供体（铝、氢和未指定的杂质）结合的激子，供体结合能接近 T2 的热活化能。
Hydrothermally grown bulk ZnO (Tokyo Denpa) was investigated using junction-capacitance spectroscopy on silver oxide Schottky contacts (barrier height of 1.20eV, ideality factor of 1.04). Two main shallow defects, T1 and T2, with thermal activation energies of 13 and 52meV, respectively, were identified. Two closely lying, deep defect levels E3∕E3′ at approximately 320meV below the conduction band were found in higher concentrations (mid-1014cm−3) than the shallow donors. 4K photoluminescence showed dominant emission from excitons bound to three neutral donors, aluminum, hydrogen, and an unassigned impurity, with donor binding energies close to the thermal activation energy of T2.