Improved electrical properties of Sr0.8Bi2.2Ta2O9 films by ZrSiO4 doping for low voltage operations of metal-ferroelectric-insulator-Si devices
Improved electrical properties of Sr0.8Bi2.2Ta2O9 films by ZrSiO4 doping for low voltage operations of metal-ferroelectric-insulator-Si devices
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DOI：
10.1063/1.3056169
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发表时间：
2009-03
影响因子：
3.2
通讯作者：
Xubing Lu;H. Ishiwara
中科院分区：
文献类型：
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作者：
Xubing Lu;H. Ishiwara
为了改善薄膜的介电性能和漏电流特性，采用化学溶液沉积的方法制备了Sr0.8Bi2.2Ta2O9(SBT)薄膜，其中掺杂了0~10wt%的ZrSiO4(ZSO)。X-射线衍射分析表明，掺杂ZSO的SBT薄膜中没有第二相，晶化降解明显。原子力显微镜和扫描电子显微镜观察发现，ZSO掺杂浓度越高，样品的颗粒尺寸越小，表面粗糙度越小。掺杂ZSO的SBT薄膜的介电常数以及剩余极化和矫顽场都有明显的降低。400℃预退火的薄膜的介电常数比750℃预退火的薄膜的介电常数小得多。此外，掺ZSO的SBT薄膜在400℃预退火后，漏电流明显减小，疲劳性能得到改善。
Sr0.8Bi2.2Ta2O9 (SBT) films were prepared by chemical solution deposition in which ZrSiO4 (ZSO) with concentration ranging from 0 to 10 wt % was incorporated for improving dielectric and leakage current characteristics of the films. X-ray diffraction analysis revealed that no secondary phase and clear degradation of crystallization can be found in ZSO-doped SBT films. Smaller grain size and reduced surface roughness were found for the samples with higher ZSO doping concentration as observed by atomic force microscopy and scanning electron microscopy. The dielectric constant was observed to be much reduced for ZSO-doped SBT films as well as the remnant polarization and coercive field. Films preannealed at 400 °C have a much smaller dielectric constant when compared with that of the films preannealed at 750 °C. Furthermore, a clear reduction in the leakage current and improved fatigue characteristics were observed for ZSO-doped SBT films preannealed at 400 °C. Such improved electrical properties as reduced ...