Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces
Measurement of contact resistivity at metal-tin sulfide (SnS) interfaces
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金属-硫化锡 (SnS) 界面接触电阻率的测量
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
R. Gordon
中科院分区：
文献类型：
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作者：
Chuanxi Yang;Leizhi Sun;R. Brandt;Sang Bok Kim;Xizhu Zhao;Jun Feng;T. Buonassisi;R. Gordon
用传输线方法测量了TiN(II)硫化物(SnS)薄膜与三种不同金属(Au、Mo、Ti)之间的接触电阻率。接触电阻按Au <； Mo <； Ti的顺序增大。Au和Mo的接触电阻足够低，不会显著降低以SnS为吸收材料的太阳能电池的效率。另一方面，钛对SnS的接触电阻很高，这会降低以钛为背接触金属的SnS太阳电池的效率。我们进一步使用与温度相关的TLM测量来估计这些金属和硫化锡之间的结的势垒高度。这三种金属的势垒高度在0.23-0.26 eV的狭窄范围内，尽管它们的功函数有很大的差异。这种费米能级钉扎效应与SnS的高介电常数相一致，与Si上的费米能级钉扎相当。退火后的SnS薄膜与Mo衬底之间的接触电阻率未见明显变化。
We measured the contact resistivity between tin(II) sulfide (SnS) thin films and three different metals (Au, Mo, and Ti) using a transmission line method (TLM). The contact resistance increases in the order Au < Mo < Ti. The contact resistances for Au and Mo are low enough so that they do not significantly decrease the efficiency of solar cells based on SnS as an absorber. On the other hand, the contact resistance of Ti to SnS is sufficiently high that it would decrease the efficiency of a SnS solar cell using Ti as a back contact metal. We further estimate the barrier heights of the junctions between these metals and tin sulfide using temperature-dependent TLM measurements. The barrier heights of these three metals lie in a narrow range of 0.23–0.26 eV, despite their large differences in work function. This Fermi level pinning effect is consistent with the large dielectric constant of SnS, and comparable to Fermi-level pinning on Si. The contact resistivity between annealed SnS films and Mo substrates un...
影响因子：
3.4
作者：
Schneikart, A.;Schimper, H-J;Jaegermann, W.
通讯作者：
Jaegermann, W.