AlGaInP multiple‐quantum‐wire lasers grown by gas source molecular beam epitaxy
AlGaInP multiple‐quantum‐wire lasers grown by gas source molecular beam epitaxy
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气源分子束外延生长的 AlGaInP 多量子线激光器
DOI：
10.1063/1.108932
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发表时间：
1993
影响因子：
4
通讯作者：
K. Hsieh
中科院分区：
文献类型：
--
作者：
E. Stellini;K. Cheng;P. Pearah;A. Chen;A. Moy;K. Hsieh
在气源分子束外延过程中，原位形成了具有多个量子线活性区的GaxIn1−xP/Al0.15Ga0.35In0.5P梯度指数分离约束异质结构可见激光结构。在量子线的形成过程中没有使用再生或非原位制造程序。量子线的横截面尺寸约为50×120 A，线密度通常为100/μm。面向[110]和[110]方向的宽区域条形激光器表现出各向异性阈值电流密度，其比值变化大于3.75倍。对于垂直于量子线的[110]方向条纹激光器，获得了低至400 A/cm2的阈值电流密度。电致发光偏振对条纹方向有很强的依赖性。
GaxIn1−xP/Al0.15Ga0.35In0.5P graded‐index separate‐confinement heterostructure visible laser structures with multiple quantum wire active regions have been formed in situ during gas source molecular beam epitaxy. No regrowths or ex situ fabrication procedures were employed in the formation of the quantum wires. Quantum wires with cross‐sectional dimensions of approximately 50×120 A were routinely achieved with a linear density of 100/μm. Broad area stripe geometry lasers with contact stripe oriented in the [110] and [110] directions exhibited anisotropic threshold current densities varying in ratio by a factor of more than 3.75. Threshold current densities as low as 400 A/cm2 were obtained for lasers with stripes in the [110] direction, perpendicular to the quantum wires. Strong dependence of electroluminescence polarization on stripe direction was also observed.