Light emission from nanoscale Si/Si oxide materials.
Light emission from nanoscale Si/Si oxide materials.
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DOI：
10.1166/jnn.2010.2033
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发表时间：
2010-03
影响因子：
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通讯作者：
G. Qin;G. Ran;K. Sun;H. J. Xu
中科院分区：
文献类型：
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作者：
G. Qin;G. Ran;K. Sun;H. J. Xu
大多数多孔硅材料都发生了不同程度的氧化。氧化多孔硅由大量的纳米硅颗粒（NSP）组成，每个纳米硅颗粒都被硅氧化物层覆盖。NSPs嵌入Si氧化物和纳米Si/纳米SiO2多层膜的结构和发光性质与氧化多孔Si的结构和发光性质相似。本文综述了这三种材料的光致发光和电致发光特性，特别是发光机理。纳米Si/Si氧化物材料已经被充分研究，并且被认为是非常有前途的Si基发光材料。在纳米Si/Si氧化物材料的光致发光和电致发光中，NSPs和Si氧化物中的发光中心的非常不同的作用被强调。
Most porous Si materials studied have been oxidized in various degrees. The oxidized porous Si comprises of a great quantity of nanoscale Si particles (NSPs) and each of them is covered by a Si oxide layer. The structure and luminescence properties of the NSPs embedded Si oxide and the nanoscale Si/nanoscale SiO2 multilayers are similar to those of the oxidized porous Si. All the three kinds of materials mentioned are called nanoscale Si/Si oxide materials and their photoluminescence and electroluminescence properties especially light emission mechanisms are reviewed in this article. Nanoscale Si/Si oxide materials have been well studied and are believed to be very promising Si based light emitting materials. The very distinct roles of the NSPs and the luminescence centers in Si oxide in the photoluminescence and electroluminescence from the nanoscale Si/Si oxide materials are highlighted.