Development and demonstration of silicon carbide (SiC) motor drive inverter modules
Development and demonstration of silicon carbide (SiC) motor drive inverter modules
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碳化硅（SiC）电机驱动逆变器模块的开发和演示
DOI：
10.1109/pesc.2003.1218297
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发表时间：
2003
期刊：
影响因子：
--
通讯作者：
A. Radun
中科院分区：
文献类型：
--
作者：
H. Chang;E. Hanna;A. Radun
本文介绍了一种新的基于SiC的电机驱动技术，用于实现紧凑的功率转换。对罗克韦尔公司设计和制造的600 V SiC MOS增强型JFET和SiC肖特基续流二极管（FWD）进行了静态和动态特性测试。对额定电压为600 V的单个5 A SiC JFET和肖特基FWD裸片进行封装，以获得10 A和25 A额定电流。测量了SiC MOS增强型JFET和SiC肖特基FWD的功率损耗和相关的电压和电流应力，并与额定值等于SiC额定值的最先进的硅IGBT和PIN FWD进行了比较。对于相同的额定功率（25 A，600 V），构成逆变器模块的SiC管芯的面积约为商用25 A IGBT管芯的60%。使用罗克韦尔自动化RA 1336型电机控制器来控制电机，其栅极驱动电路被修改为控制SiC耗尽型MOS增强型JFET。SiC逆变器模块制造并用于成功驱动1马力至10马力的电机。据我们所知，这是首次展示使用SiC逆变器模块的电机驱动器。
This paper describes a new SiC-based motor drive technology used to achieve compact power conversion. The static and dynamic characterization of 600 V SiC MOS-enhanced JFETs and SiC Schottky free-wheeling diodes (FWDs) designed and fabricated at Rockwell Scientific, are performed. Single 5 A SiC JFET and Schottky FWD die with a voltage rating of 600 V are paralleled to obtain 10 A, and 25 A, current ratings. The power loss and related voltage and current stress of the SiC MOS-enhanced JFET and SiC Schottky FWD are measured and compared to that of a state-of-the-art silicon IGBTs and PIN FWDs with ratings equal to the SiC ratings. For the same power rating (25 A, 600 V), the area of the SiC die making up the inverter module are about 60% of a commercial 25 A IGBT die. The Rockwell Automation RA Model 1336 motor controller is used, with its gate drive circuit modified to control the SiC depletion-mode MOS-enhanced JFETs, to control a motor. SiC inverter modules are fabricated and used to successfully drive 1 hp to 10 hp motors. To our knowledge, this is the first time that a motor drive using SiC inverter modules has been demonstrated.