Photodiodes for Terahertz Applications

Photodiodes for Terahertz Applications
复制标题

DOI:
10.1109/jstqe.2021.3108954
复制
发表时间:
2022-03-01
影响因子:
4.9
通讯作者:
Seeds, Alwyn J.
Seeds, Alwyn J.
中科院分区:
工程技术2区
文献类型:
--
作者:
Seddon, James P.;Natrella, Michele;Seeds, Alwyn J.

文献摘要

被引文献

相似文献

使用高速光电二极管产生太赫兹已经在光谱学、成像和通信等许多领域得到了商业应用。在本文中,我们讨论了高速光电二极管的带宽和输出功率方面的优化。我们确定了一些主要的限制,在太赫兹频段的高输出功率的产生。我们提出了一个建模工具的天线耦合单向旅行载波光电二极管的数值评估和实验评估的制造设计。我们还提出了一个热分析的光电二极管旁边的输出功率饱和的脉冲测量。
Terahertz generation using high-speed photodiodes has found commercial application in many areas ranging across spectroscopy, imaging and communications. In this paper we discuss the optimization of high-speed photodiodes in terms of bandwidth and output power. We identify some of the main limitations in the generation of high output power in the Terahertz frequency band. We present a modelling tool for the numerical evaluation of antenna coupled uni-travelling carrier photodiodes and experimental evaluation of the fabricated designs. We also present a thermal analysis of the photodiodes alongside pulsed measurements of the output power saturation.