Initial growth of interfacial oxide during deposition of HfO2 on silicon
Initial growth of interfacial oxide during deposition of HfO2 on silicon
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DOI：
10.1063/1.1771457
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发表时间：
2004-07
影响因子：
4
通讯作者：
K. Choi;H. Temkin;H. Harris;S. Gangopadhyay;L. Xie;M. White
中科院分区：
文献类型：
--
作者：
K. Choi;H. Temkin;H. Harris;S. Gangopadhyay;L. Xie;M. White
Hf scinSi，HfO 2 scinSiO 2 scinSi，和HfO 2 scinSi的界面化学研究通过X射线光电子能谱，以了解界面层的形成机制。采用电子束蒸发法在Si基片上沉积了Hf和HfO 2薄膜。我们表明，界面层的形成主要发生在HfO 2膜沉积的初始阶段。Hf金属与Si之间的临时直接键合被认为是导致界面层形成的催化反应的来源。通过化学生长的薄氧化物阻挡直接Si-Hf键合，抑制了界面层的形成。我们还证明减少界面层后修改白木表面蚀刻，相比美国无线电公司清洁。这表明更完全的氢终止和原子级更光滑的表面可以延迟界面层形成的开始。
Interfacial chemistry of Hf∕Si, HfO2∕SiO2∕Si, and HfO2∕Si is investigated by x-ray photoelectron spectroscopy in order to understand the interfacial layer formation mechanism. Deposition of Hf and HfO2 films was carried out on Si wafers by electron-beam evaporation with oxygen backfill. We show that the interfacial layer formation takes place predominantly at the initial stage of the HfO2 film deposition. Temporary direct bonding between Hf metal and Si is proposed to be the source of the catalytic reaction resuting in formation of interfacial layer. Formation of interfacial layer was suppressed by chemically grown thin oxide blocking the direct Si–Hf bonding. We also demonstrate reduced interfacial layer after modified Shiraki surface etch, compared to the Radio Corporation of America clean. This indicates that a more complete hydrogen termination and atomically smoother surface can delay the onset of interfacial layer formation.