Characterization of Cu(In,Ga)Se 2 /Mo Interface in CIGS Solar Cells
Characterization of Cu(In,Ga)Se 2 /Mo Interface in CIGS Solar Cells
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CIGS 太阳能电池中 Cu(In,Ga)Se 2 /Mo 界面的表征
DOI：
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
T. Wada
中科院分区：
文献类型：
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作者：
S. Nishiwaki;N. Kohara;T. Negami;M. Nishitani;T. Wada
用X射线衍射仪和高分辨电子显微镜研究了Cu(In，Ga)Se{sub2}(CIGS)与底层Mo层之间的界面。采用三步法在镀钼钠钙玻璃上沉积了CIGS层。在三阶段工艺的第二阶段，在CIGS/Mo界面形成了一层MoSE{sub2}层。MoSE{sub2}层的厚度取决于用于沉积CIGS薄膜的衬底温度以及CIGS和/或Mo层的Na含量。衬底温度越高，MOSE{sub2}层越厚。CIGS和/或Mo层中的Na被认为有助于MoS{sub2}的形成。CIGS/Mo界面形成的异质结的电流-电压测量即使在低温下也是欧姆的。讨论了MOSE{sub2}层在高效CIGS太阳电池中的作用。
The interface between a Cu(In,Ga)Se{sub 2} (CIGS) and an underlying Mo layer was studied by X-ray diffraction and high resolution transmission electron microscopy. The CIGS layer was deposited onto Mo coated soda-lime glass using the 3-stage process. A MoSe{sub 2} layer found to form at the CIGS/Mo interface during the 2nd stage of the 3-stage process. The thickness of the MoSe{sub 2} layer depended on the substrate temperature used for CIGS film deposition as well as the Na content of the CIGS and/or Mo layers. For higher substrate temperatures, thicker MoSe{sub 2} layers were observed. The Na in the CIGS and/or Mo layer is felt to assist in the formation of MoSe{sub 2}. Current-Voltage measurements of the heterojunction formed by the CIGS/Mo interface were ohmic even at low temperature. The role of the MoSe{sub 2} layer in high efficiency CIGS solar cells is discussed.