Improved Interface Charge Extraction by Double Electron Transport Layers for High-Efficient Planar Perovskite Solar Cells

Improved Interface Charge Extraction by Double Electron Transport Layers for High-Efficient Planar Perovskite Solar Cells
复制标题

通过双电子传输层改善高效平面钙钛矿太阳能电池的界面电荷提取

DOI:
10.1002/solr.201900314
复制
发表时间:
2019-09-19
期刊:
影响因子:
7.9
通讯作者:
Zhang, Yu
Zhang, Yu
中科院分区:
工程技术2区
文献类型:
--
作者:
Gao, Yanbo;Wu, Yanjie;Zhang, Yu

文献摘要

被引文献

相似文献

电子传输层(ETL)的电荷提取对于提高钙钛矿太阳能电池(PSC)的性能起着至关重要的作用。在这里,与四种不同类型的ETL,如SnO 2,amorphous-Zn 2SnO 4(am-ZTO),am-ZTO/SnO 2,和SnO 2/am-ZTO,PSC成功地合成。系统地研究了四种ETL对器件界面复合行为和电荷输运特性的影响。对于双am-ZTO/SnO 2 ETL,通过脉冲激光沉积方法制备的紧凑的am-ZTO ETL提供了比旋涂膜更致密的与FTO的物理接触,降低了ETL/FTO界面处的漏电流并改善了电荷收集。此外,双am-ZTO/SnO 2 ETL导致大的自由能差(Δ G),改善了从钙钛矿到ETL的电子注入。形成了从钙钛矿到am-ZTO的一个额外的电子路径,这也可以提高电子注入效率。基于双am-ZTO/SnO 2 ETL的器件的功率转换效率为20.04%,稳定效率为19.17%。最重要的是,这些器件是在150摄氏度的低温下制造的,这为大规模生产PSC提供了一种潜在的方法,并为柔性PSC的开发铺平了道路。本研究为通过控制Δ G和界面接触来设计ETL以提高PSC的性能提供了一种策略。
Charge extraction by electron transport layers (ETLs) plays a vital role in improving the performance of perovskite solar cells (PSCs). Here, PSCs with four different types of ETLs, such as SnO2, amorphous-Zn2SnO4 (am-ZTO), am-ZTO/SnO2, and SnO2/am-ZTO, are successfully synthesized. The interface recombination behavior and the charge transport properties of the devices affected by four types of ETLs are systematically investigated. For dual am-ZTO/SnO2 ETLs, compact am-ZTO ETL prepared by the pulsed laser deposition method provides a dense physical contact with FTO than the spin coating films, decreasing leakage current and improving charge collection at the interface of ETL/FTO. Moreover, dual am-ZTO/SnO2 ETLs lead to large free energy difference (Delta G), improving electron injection from perovskite to ETLs. One additional electron pathway from perovskite to am-ZTO is formed, which can also improve electron injection efficiency. A power conversion efficiency of 20.04% and a stabilized efficiency of 19.17% are achieved for the device based on dual am-ZTO/SnO2 ETLs. Most importantly, the devices are fabricated at a low temperature of 150 degrees C, which offers a potential method for large-scale production of PSCs, and paves the way for the development of flexible PSCs. It is believed that this work provides a strategy to design ETLs via controlling Delta G and interface contact to improve the performance of PSCs.