Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition
Toward controlling the carrier density of Si doped Ga2O3 films by pulsed laser deposition
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DOI：
10.1063/1.4962463
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发表时间：
2016-09-05
影响因子：
4
通讯作者：
Guo, Qixin
中科院分区：
文献类型：
--
作者：
Zhang, Fabi;Arita, Makoto;Guo, Qixin
精确控制掺杂剂成分对于生产具有所需性能的半导体薄膜至关重要。在这里，我们展示了通过脉冲激光沉积技术 (PLD) 生长的 Si 掺杂 Ga2O3 薄膜的电性能结果。通过改变二次离子质谱测量观察到的目标成分，可以控制膜中的Si成分。通过霍尔设备测量，薄膜的载流子密度从10(15)到10(20)cm(-3)变化，电导率从10(-4)到1Scm(-1)变化。通过开尔文力显微镜验证了薄膜的载流子密度，结果表明随着载流子密度的增加，表面功函数增加。结果表明，β-Ga2O3薄膜的载流子密度可以通过PLD掺杂Si来控制，为开发基于Ga2O3薄膜的电子器件铺平了道路。由 AIP 出版社出版。
Precise control of dopant composition is critical for the production of semiconductor films with desired properties. Here, we present results on the electrical properties for Si doped Ga2O3 films grown by pulsed laser deposition technique (PLD). The Si composition in the films can be controlled by changing the target composition as observed from the secondary ion mass spectroscopy measurement. The carrier density of the films is varied from the order of 10(15) to 10(20) cm(-3) while the conductivity from 10(-4) to 1 S cm(-1) as measured by Hall equipment. The carrier density of the films has been verified by Kelvin force microscopy, which shows an increased surface work function with the increase of carrier density. The results suggest that the carrier density of beta-Ga2O3 films is controllable by Si doping by PLD, paving a way to develop the Ga2O3 film-based electronic devices. Published by AIP Publishing.