H2 sensing properties in highly oriented SnO2 thin films
H2 sensing properties in highly oriented SnO2 thin films
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DOI：
10.1016/j.snb.2007.02.043
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发表时间：
2007-08-08
影响因子：
8.4
通讯作者：
Hong, Seong-Hyeon
中科院分区：
文献类型：
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作者：
Choi, Yun-Hyuk;Hong, Seong-Hyeon
利用射频磁控溅射在不同取向的蓝宝石衬底上沉积高取向的多晶 SnO2 薄膜，并研究了晶体取向对 H2 气敏性能的影响。 SnO2 薄膜的取向随基底取向的变化而变化，使得 (10 1)、(0 0 2) 和 (1 0 1) 取向薄膜分别生长在 (1 1 (2) over bar 0) (a-cut)、(1 0 (1) over bar 0) (m-cut) 和 (1 (1) over bar 0 2) (r-cut) Al2O3 基底上。在 (0 0 0 1) (c 切) Al2O3、石英和 SiO2 (20,000 埃)/Si 衬底上沉积的薄膜中观察到不止一种择优取向。所有薄膜都具有相似的厚度（接近115 nm）、均方根（rms）粗糙度（接近1 nm）和表面积，因此每个薄膜的传感性能几乎不受微观结构的影响。 (1 0 1) SnO2、在 (1 (1) over bar 0 2) Al2O3 上生长的薄膜表现出最高的 H-2 气体响应 (R-o/R-g)，类似于 300 至 1.0% H-2/空气，而其他薄膜表现出较低的气体响应。通过AES和XPS进一步检查了薄膜的化学成分和表面状态，以找出在(1 1 (2) over bar 0)和(1 (1) over bar 0 2) Al2O3上生长的(10 1)薄膜具有不同H、气体响应的原因。 (C) 2007 Elsevier B.V. 保留所有权利。
Highly oriented polycrystalline SnO2 films were deposited on the sapphire substrates with various orientations using rf magnetron sputtering, and the effects of the crystallographic orientation on the H, gas sensing performance were investigated. The orientation of the SnO2 films was varied with the substrate orientation such that (10 1), (0 0 2), and (1 0 1) oriented films were grown on (1 1 (2) over bar 0) (a-cut), (1 0 (1) over bar 0) (m-cut), and (1 (1) over bar 0 2) (r-cut) Al2O3 substrates, respectively. More than one preferred orientation was observed in the films deposited on (0 0 0 1) (c-cut) Al2O3, quartz, and SiO2 (20,000 angstrom)/Si substrates. All the films had a similar thickness (similar to 115 nm), root-mean-square (rms) roughness (similar to 1 nm), and surface area, and therefore the sensing performance of each film was little affected by the microstructure. The (1 0 1) SnO2, films grown on (1 (1) over bar 0 2) Al2O3 exhibited the highest H-2 gas response (R-o/R-g) of similar to 300 to 1.0% H-2/air, and the other films showed an order of magnitude lower gas response. The chemical composition and surface state of the films were further examined by AES and XPS to find out the reasons for the different H, gas response of the (10 1) films grown on (1 1 (2) over bar 0) and (1 (1) over bar 0 2) Al2O3. (C) 2007 Elsevier B.V. All rights reserved.