Metal-Containing Block Copolymer Thin Films Yield Wire Grid Polarizers with High Aspect Ratio
Metal-Containing Block Copolymer Thin Films Yield Wire Grid Polarizers with High Aspect Ratio
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DOI：
10.1002/adma.201303452
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发表时间：
2014-02-05
影响因子：
29.4
通讯作者：
Register, Richard A.
中科院分区：
文献类型：
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作者：
Kim, So Youn;Gwyther, Jessica;Register, Richard A.
高选择性蚀刻掩膜是由聚苯乙烯-b-聚（二茂铁异丙基甲基硅烷）二嵌段共聚物PS-PFiPMS薄膜形成的，其中含有PFiPMS的半圆柱形结构域。这些周期为35 nm的畴很容易通过机械剪切排列。采用对准的PS-PFiPMS模板制备了高纵横比的非晶硅纳米线网格，其极化深度紫外辐射（包括193 nm）的效率为> - 90%。
Highly selective etch masks are formed by thin films of a polystyrene-b-poly(ferrocenylisopropylmethylsilane)diblock copolymer, PS-PFiPMS, containing hemicylindrical domains of PFiPMS. These domains, with a period of 35 nm, are readily aligned through mechanical shear. Aligned PS-PFiPMS templates are employed to fabricate high-aspect-ratio nanowire grids from amorphous silicon, which can polarize deep ultraviolet radiation, including 193 nm, at >90% efficiency.