Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding
Electrical properties and energy band alignments of p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures fabricated by surface-activated bonding
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DOI：
10.1063/5.0128554
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发表时间：
2023-05
影响因子：
3.2
通讯作者：
Zhenwei Wang;T. Kitada;Daiki Takatsuki;Jianbo Liang;N. Shigekawa;M. Higashiwaki
中科院分区：
文献类型：
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作者：
Zhenwei Wang;T. Kitada;Daiki Takatsuki;Jianbo Liang;N. Shigekawa;M. Higashiwaki
我们采用表面活化键合技术(SAB)制备了p-Si/n-Ga2O和p+-Si/n-Ga2O异质结，并研究了它们的电学性质。在450°C的热处理前后进行了电流密度-电压测量。退火后电流密度显著增加，这归因于键合过程中形成的中间层变薄。P-Si/n-Ga2O异质结具有明显的两级电容-电压特性，在考虑异质界面形成的二维电子气的影响下，数值计算很好地再现了这一特性。这些结果表明，利用SAB可以制备出界面性能良好、大面积均匀的Ga2O3基p-n异质结。
We fabricated p-Si/n-Ga2O3 and p+-Si/n-Ga2O3 heterostructures by surface-activated bonding (SAB) and investigated their electrical properties. Current density–voltage measurement was performed before and after thermal annealing at 450 °C. The current density substantially increased after annealing, which was attributed to thinning of an intermediate layer formed by the bonding process. Distinctive two-stage capacitance–voltage characteristics were observed for p-Si/n-Ga2O3 heterostructures, which were well reproduced by numerical calculation considering the effect of two-dimensional electron gas formed at the heterointerface. These results indicate that Ga2O3-based p–n heterostructures with good interface properties and large-area uniformity can be fabricated using SAB.