SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers
SrTiO3 thin film capacitors on silicon substrates with insignificant interfacial passive layers
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硅衬底上的 SrTiO3 薄膜电容器，界面无源层微不足道
DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
R. Waser
中科院分区：
文献类型：
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作者：
S. Schmelzer;D. Bräuhaus;S. Hoffmann‐Eifert;P. Meuffels;U. Böttger;L. Oberbeck;P. Reinig;U. Schröder;R. Waser
采用溅射沉积法，在氧化硅衬底上直接生长了由SrRuO3电极和介质SrTiO3（STO）组成的非外延薄膜电容器。发现层的表面粗糙度非常低（约0.2nm）。 介电测量作为温度的函数进行不同的STO厚度下降到7 nm的样品，显示温度依赖性的界面钝化层。STO膜的介电常数被发现是在200的范围内，在室温下的所有样品，这导致低于0.2 nm的最小电容等效厚度。
Using sputter deposition, nonepitaxial ultrathin film capacitors consisting of SrRuO3 electrodes and dielectric SrTiO3 (STO) were grown directly on oxidized silicon substrates. The surface roughness of the layers was found to be very low (≲0.2 nm). Dielectric measurements as a function of temperature were performed on samples with different STO thickness down to 7 nm, showing temperature dependence of the interfacial passive layers. The dielectric constant of the STO films was found to be in the range of 200 at room temperature for all samples, which leads to a minimum capacitance equivalent thickness below 0.2 nm.