Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires
Improved light-emitting diode performance by conformal overgrowth of multiple quantum wells and fully coalesced p-type GaN on GaN nanowires
复制标题
DOI：
10.1063/1.3572032
复制
发表时间：
2011-04
影响因子：
4
通讯作者：
P. Frajtag;A. Hosalli;G. Bradshaw;N. Nepal;N. El-Masry;S. Bedair
中科院分区：
文献类型：
--
作者：
P. Frajtag;A. Hosalli;G. Bradshaw;N. Nepal;N. El-Masry;S. Bedair
我们展示了一种发光二极管 (LED) 结构，其具有在 n-GaN 纳米线 (NW) 的半极性和非极性平面上共形生长的多个量子阱 (MQW)，然后在这些纳米线上沉积完全聚结的 p-GaN。纳米线尖端的过度生长导致 GaN 薄膜中出现高度约一微米的高密度空隙。 NWs LED 的光输出强度比同时生长的相应 c 面 LED 高出三倍以上。我们相信，这是由于缺陷密度降低、共形生长的多量子阱有效面积增加、极面取向缺失以及光提取改进所致。
We demonstrate a light-emitting diode (LED) structure with multiple quantum wells (MQWs) conformally grown on semipolar and nonpolar plane facets of n-GaN nanowires (NWs), followed by deposition of fully coalesced p-GaN on these nanowires. Overgrowth on the nanowires’ tips results in inclusion of high density voids, about one micron in height, in the GaN film. The light output intensity of NWs LEDs is more than three times higher than corresponding c-plane LEDs grown simultaneously. We believe this results from a reduced defect density, increased effective area of conformally grown MQWs, absence of polar plane orientation, and improved light extraction.