Band-gap engineering in Cu(In,Ga)Se-2 thin films grown from (In,Ga)(2)Se-3 precursors
Band-gap engineering in Cu(In,Ga)Se-2 thin films grown from (In,Ga)(2)Se-3 precursors
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DOI：
10.1016/0927-0248(95)00122-0
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发表时间：
1996-06-01
影响因子：
6.9
通讯作者：
Hermann, AM
中科院分区：
文献类型：
--
作者：
Gabor, AM;Tuttle, JR;Hermann, AM
从（In，Ga）（2）Se-3前驱膜开始的三阶段工艺成功地制备了具有渐变带隙的Cu（In，Ga）Se-2薄膜。在这项工作中，我们研究（1）的Cu + Se与（In，Ga）（2）Se-3的反应，这导致了一个自发的梯度的Ga含量作为深度的函数通过膜，和（2）通过In + Ga + Se的最终沉积的膜的表面区域中的Ga含量的修改。我们展示了如何带隙分级可以通过形成不均匀的前体来增强，如何逆扩散限制了表面区域中可能的分级程度，以及CuxSe第二相如何起作用以使膜组合物均匀化。
A three-stage process starting with the deposition of (In,Ga)(2)Se-3 precursor films has been successful in the fabrication of graded band-gap Cu(In,Ga)Se-2 thin films. In this work we examine (1) the reaction of Cu + Se with (In,Ga)(2)Se-3, which leads to a spontaneous grading in the Ga content as a function of depth through the film, and (2) modification of the Ga content in the surface region of the film through a final deposition of In + Ga + Se. We show how band-gap grading can be enhanced by the formation of non-uniform precursors, how counterdiffusion limits the degree of grading possible in the surface region, and how the CuxSe secondary phase acts to homogenize the film composition.